OPTICAL AND ELECTRICAL PROPERTIES OF ARGON ION BEAM IRRADIATED PVA/Ag NANOCOMPOSITES

2017 ◽  
Vol 24 (03) ◽  
pp. 1750038 ◽  
Author(s):  
A. M. ABDEL REHEEM ◽  
A. ATTA ◽  
T. A. AFIFY
Keyword(s):  
Silver Nanoparticles ◽  
Electrical Properties ◽  
Ion Beam ◽  
Composite Films ◽  
Band Gap Energy ◽  
Dielectric Measurement ◽  
Optical And Electrical Properties ◽  
Structure Property ◽  
Casting Technique ◽  
Argon Ion

In this work, PVA/Ag nanocomposites films were prepared using solution casting technique, these films were irradiated with Argon ion beam to modify the structure. The main objective of the study is to enhance the optical and electrical properties of the polymer nanocomposites films by irradiation. The conventional characterization techniques such as UV–Visible spectroscopy, X-ray diffraction (XRD), Fourier transform infrared (FTIR), transmission electron microscope (TEM) and dielectric measurement are employed to understand the structure–property relations. FTIR analysis of these composite films shows chemical changes and a significant impact on them can be observed after irradiation. After doping, the XRD data shows silver nanoparticles formation in the PVA polymer. The band gap energy of samples is decreased with increases in the concentration of silver nanoparticles and ion beam fluence, which gives clear indication that ion beam irradiation induced defects are formed in the composite systems. The electrical conductivity, dielectric loss [Formula: see text] and dielectric constant [Formula: see text] are increased with increasing ion beam fluence and Ag dopant concentration.

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

scholarly journals Influence of the La3+, Eu3+, and Er3+ Doping on Structural, Optical, and Electrical Properties of BiFeO3 Nanoparticles Synthesized by Microwave-Assisted Solution Combustion Method

2019 ◽  
Vol 2019 ◽  
pp. 1-11 ◽  
Author(s):  
Angelika Wrzesinska ◽  
Alexander Khort ◽  
Izabela Bobowska ◽  
Adam Busiakiewicz ◽  
Aleksandra Wypych-Puszkarz
Keyword(s):  
Rare Earth ◽  
Electrical Properties ◽  
Bismuth Ferrite ◽  
Solution Combustion Synthesis ◽  
Combustion Method ◽  
Band Gap Energy ◽  
Rare Earth Doping ◽  
Optical And Electrical Properties ◽  
Solution Combustion ◽  
Microwave Assisted

In this study, nanocrystalline (18–28 nm) perovskite-like bismuth ferrite rare earth-doped powders (Bi0.9RE0.1FeO3, where RE = La (BLaFO), Eu (BEuFO), and Er (BErFO)) were obtained by microwave-assisted modification of solution combustion synthesis (SCS). The influence of high load La3+, Eu3+, and Er3+ doping on structural, optical, and electrical properties of BiFeO3 was investigated. It was found that rare earth doping along with fast phase formation and quenching significantly distorts the crystal cells of the obtained materials, which results in the formation of mixed rhombohedral- (R3c-) orthorhombic (Pbnm) crystal structures with decreased lengths of Bi-O and Fe-O bonds along with a decreasing radius size of doping ions. This promotes reduction of the optical band gap energy and suppression of ionic polarization at high frequencies and results in enhanced dielectric permittivity of the materials at 1 MHz.

scholarly journals The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

2010 ◽  
Vol 25 (1) ◽  
pp. 189-196 ◽  
Author(s):  
Hulya Metin ◽  
Mehmet Ari ◽  
Selma Erat ◽  
Semra Durmuş ◽  
Mehmet Bozoklu ◽  
...  
Keyword(s):  
Activation Energy ◽  
Phase Transformation ◽  
Electrical Properties ◽  
Electronic Transport ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Urbach Energy ◽  
Band Gap Energy ◽  
Optical And Electrical Properties ◽  
Gap Energy

Cadmium sulfide (CdS) photocatalyst films were grown on glass by chemical bath deposition (pH 9.4, 70 °C) and then annealed in nitrogen from 423 K to 823 K in steps of 100 K. The XRD crystallite size increases in a sigmoidal manner from 60 nm to 100 nm while the optical band gap energy decreases from 2.42 eV to 2.28 eV. This trend is paralleled by the decreasing Urbach energy, but only up to 623 K, where it increases again. This is the temperature where the Cd effectively surpasses the phase transformation from cubic to hexagonal, and the activation energy for electronic transport drops by a factor of nearly two.

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