TEM MICROSTRUCTURE ANALYSIS FOR COMPRESSIVELY STRESSED Pb(Zr,Ti)O3 THIN FILMS BY CSD-DERIVED LaNiO3 BOTTOM ELECTRODES

2012 ◽  
Vol 05 (02) ◽  
pp. 1260016 ◽  
Author(s):  
KOTARO OZAWA ◽  
MASAAKI ISHIZUKA ◽  
NAONORI SAKAMOTO ◽  
TOMOYA OHNO ◽  
TAKANORI KIGUCHI ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Piezoelectric Properties ◽  
Ferroelectric Properties ◽  
Si Substrate ◽  
Solution Deposition ◽  
Pzt Film ◽  
Tem Microstructure ◽  
Si Films ◽  
Perovskite Type ◽  
Ferroelectric And Piezoelectric Properties

Pb(Zr,Ti)O3 (PZT) possesses superior ferroelectric and piezoelectric properties arisen near a morphotropic phase boundary (MPB) composition, PbZr0.53Ti0.47O3 . We have prepared a PZT (MPB composition) thin film and perovskite-type LaNiO3 (LNO) electrodes on Si substrate by chemical solution deposition (CSD) method. The CSD-derived LNO bottom electrode applied compressive stress to the PZT film and enhanced the ferroelectric properties of the PZT film. TEM and SAED revealed that stress distribution and microstructures of the PZT/LNO/ Si films effectively influenced the ferroelectric properties.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Study on Dielectric and Ferroelectric Properties of Gd-Doped Sr2Bi4Ti5O18 Ceramics

2011 ◽  
Vol 328-330 ◽  
pp. 1131-1134
Author(s):  
Qian Chen ◽  
Zhi Jun Xu ◽  
Rui Qing Chu ◽  
Yong Liu ◽  
Ming Li Chen ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Ferroelectric Properties ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Structural Ceramics ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Maximum Value ◽  
Pure Bismuth ◽  
Ferroelectric And Piezoelectric Properties

Lead-free piezoelectric ceramics Sr2Bi4-xGdxTi5O18 were prepared by conventional solid-state reaction method. Pure bismuth layered structural ceramics with uniform gain size were obtained in all samples. The effect of Gd-doping on the dielectric, ferroelectric and piezoelectric properties of Sr2Bi4Ti5O18 ceramics were also investigated. It was found that that Gd3+ dopant gradually decreased the Curie temperature (Tc) with the lower dielectric loss (tand) of SBTi ceramics. In addition, Gd-doping with appropriate content improved the ferroelectric and piezoelectric properties of the SBTi ceramics. The piezoelectric constant (d33) of the Sr2Bi3.9Gd0.1Ti5O18 ceramic reached the maximum value, which is 22 pC/N. The results showed that the Sr2Bi4-xGdxTi5O18 ceramic was a promising lead-free piezoelectric material.

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Nickel Nitrate ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Lanthanum Nickel ◽  
Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

One-Axis-Oriented Crystal Growth of Lead Zirconate Titanate Thin Films on Metal Substrates Using Perovskite-Type Oxide Nanosheet Layer

2013 ◽  
Vol 582 ◽  
pp. 15-18
Author(s):  
Y. Minemura ◽  
Y. Kondoh ◽  
H. Funakubo ◽  
Hiroshi Uchida
Keyword(s):  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Oriented Crystal ◽  
Solution Deposition ◽  
Pzt Film ◽  
Perovskite Type Oxide ◽  
Pzt Films ◽  
Perovskite Type

One-axis-oriented Pb (Zr,Ti)O3(PZT) films were fabricated using a chemical solution deposition technique on (111)Pt/TiO2/(100)Si and Inconel625 substrates buffered by nanosheet Ca2Nb3O10(ns-CN). The (001)-oriented PZT crystals (Zr/Ti=0.40:0.60, tetragonal) were preferentially grown on (001)ns-CN/Inconel625, whereas the PZT crystals deposited on (001)ns-CN/(111)Pt/ TiO2/(100)Si exhibited preferential PZT(100) orientation. The resulting PZT film on (001)ns-CN/Inconel625 indicated remanent polarization of approximately 59 μC/cm2, which was significantly larger than that on (001)ns-CN/(111)Pt/TiO2/(100)Si.

EFFECT OF Pr DOPING ON FERROELECTRIC BEHAVIORS OF Pb(Zr0.65Ti0.35)O3

2008 ◽  
Vol 22 (13) ◽  
pp. 2071-2082
Author(s):  
F. YUAN ◽  
F. GAO ◽  
K. F. WANG ◽  
S. DONG ◽  
Y. WANG ◽  
...  
Keyword(s):  
Piezoelectric Properties ◽  
Ferroelectric Properties ◽  
Crystallographic Structure ◽  
Dielectric Measurements ◽  
Ceramic Samples ◽  
Solid State Sintering ◽  
Sintering Method ◽  
Rhombohedral Symmetry ◽  
Ferroelectric And Piezoelectric Properties ◽  
Dielectric Relaxor

Pr -doped Pb ( Zr 0.65 Ti 0.35) O 3 ( Pb 1-x Pr x( Zr 0.65 Ti 0.35)1-x/4 O 3, PPZT) ceramic samples are prepared using conventional solid-state sintering method, and their structural, dielectric, ferroelectric, and piezoelectric properties are investigated, focusing on the effects of Pr -doping. Upon increasing Pr doping level x, a transition of the crystallographic structure from rhombohedral symmetry to tetrahedral and finally to pseudocubic symmetry is observed at x ~ 0.08. The detailed dielectric measurements present a clear indication of relaxor-like behaviors at x = 0.08, while the samples at x < 0.08 offer slightly improved ferroelectric properties compared with pure Pb ( Zr 0.65 Ti 0.35) O 3. In spite of the dielectric relaxor behaviors induced by Pr -doping, both the ferroelectric and piezoelectric properties of PPZT are degraded at x = 0.08. The physics underlying the Pr -doping induced relaxor behaviors is then discussed.

Structural, optical, magnetic, ferroelectric, and piezoelectric properties of (Pb,Ba)(Ti,Fe)O3 perovskites: a macroscopic and nanoscale properties approach

2016 ◽  
Vol 4 (39) ◽  
pp. 9331-9342 ◽  
Author(s):  
F. M. Pontes ◽  
A. J. Chiquito ◽  
W. B. Bastos ◽  
Marcelo A. Pereira-da-Silva ◽  
E. Longo
Keyword(s):  
Chemical Solution Deposition ◽  
Single Phase ◽  
Piezoelectric Properties ◽  
Fe Doping ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Polycrystalline Thin Films ◽  
Ferroelectric And Piezoelectric Properties

Single-phase Pb0.50Ba0.50Ti1−xFexO3 (PBTF) polycrystalline thin films with different Fe doping contents were prepared on Pt/Ti/SiO2/Si substrates using a chemical solution deposition method.

Preparation of heteroepitaxial SrRuO3 thin film on Si substrate and microstructure of BaTiO3-NiFe2O4 epitaxial composite thin film deposited on the SrRuO3 bottom electrode using PLD

2011 ◽  
Vol 1308 ◽  
Author(s):  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Shigeki Sawamura ◽  
Desheng Fu ◽  
Kazuo Shinozaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Pressure ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Composite Thin Film ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Srruo3 Thin Film ◽  
Paramagnetic Properties

ABSTRACTA “0-0 type” multiferroic BaTiO3-NiFe2O4 (BT-NF) composite thin film was prepared on SrRuO3/(La,Sr)MnO3/CeO2/YSZ/Si(001) substrate using pulsed laser deposition (PLD). Epitaxial growth of the film was confirmed using x-ray pole figure measurements. Cross-sectional TEM observations revealed that the crystal structure and morphology of the BT-NF composite thin film depends on the oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr has smaller grains than that deposited at 1.0×10-1 Torr. The magnetic and ferroelectric properties of BT-NF composite thin film were correlated with the microstructure that was controlled by oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr had paramagnetic properties with less polarization than the film deposited at 1.0×10-1 Torr.

The effect of H2 distribution in (Pb,La)(Zr,Ti)O3 capacitors with conductive oxide electrodes on the degradation of ferroelectric properties

2015 ◽  
Vol 1729 ◽  
pp. 93-98
Author(s):  
Yoko Takada ◽  
Naoki Okamoto ◽  
Takeyasu Saito ◽  
Kazuo Kondo ◽  
Takeshi Yoshimura ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Bottom Electrode ◽  
Secondary Ion Mass Spectrometry ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Oxide Electrodes ◽  
Conductive Oxide ◽  
Plzt Thin Film ◽  
Secondary Ion

ABSTRACTWe fabricated ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) capacitors with Sn:In2O3 (ITO) top electrodes using chemical solution deposition. Then, the effects of a thin conductive ITO buffer layer between the Pt bottom electrode and PLZT thin film were investigated in combination with top electrode (ITO/PLZT/ITO/Pt). The H2 degradation resistance of ITO/PLZT/ITO/Pt capacitors with a 3- and 28-nm-thick buffer layer was improved to 78 and 85%, respectively, from 60% without a buffer layer. The time-of-flight secondary ion mass spectrometry profiles indicated the intensity of H ion increased after 45 min forming gas (3% H2/balance N2) annealing.

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