Preparation of heteroepitaxial SrRuO3 thin film on Si substrate and microstructure of BaTiO3-NiFe2O4 epitaxial composite thin film deposited on the SrRuO3 bottom electrode using PLD

2011 ◽  
Vol 1308 ◽  
Author(s):  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Shigeki Sawamura ◽  
Desheng Fu ◽  
Kazuo Shinozaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Pressure ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Composite Thin Film ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Srruo3 Thin Film ◽  
Paramagnetic Properties

ABSTRACTA “0-0 type” multiferroic BaTiO3-NiFe2O4 (BT-NF) composite thin film was prepared on SrRuO3/(La,Sr)MnO3/CeO2/YSZ/Si(001) substrate using pulsed laser deposition (PLD). Epitaxial growth of the film was confirmed using x-ray pole figure measurements. Cross-sectional TEM observations revealed that the crystal structure and morphology of the BT-NF composite thin film depends on the oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr has smaller grains than that deposited at 1.0×10-1 Torr. The magnetic and ferroelectric properties of BT-NF composite thin film were correlated with the microstructure that was controlled by oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr had paramagnetic properties with less polarization than the film deposited at 1.0×10-1 Torr.

Nano-scale Interfacial Reactions of SrRuO3 Thin Film on Si (100) Substrate

2001 ◽  
Vol 666 ◽  
Author(s):  
Sang Ho Oh ◽  
Chan-Gyung Park
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Electron Probe ◽  
Interfacial Reactions ◽  
Si Substrate ◽  
Structural Variations ◽  
X Ray ◽  
Binary Oxides ◽  
Transmission Electron ◽  
Srruo3 Thin Film

ABSTRACTInterfacial reactions between SrRuO3 films and Si substrate were investigated by using field emission-transmission electron microscopy (FE-TEM). The compositional and structural variations across the interface were analyzed by using energy dispersive X-ray spectroscopy (EDS) and diffraction with an electron probe in 0.5 nm in diameter. Two constituent binary oxides of SrRuO3, i.e. SrO and RuO2, were found to react differently on Si surface: 1) SrO in stable contact with Si, and 2) RuO2 in unstable contact. The reduction of SrRuO3 to elemental Ru by Si is believed to be most favorable candidate for the reaction leading to the unstable contact of SrRuO3 on Si.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

Cross-sectional X-ray nanobeam diffraction analysis of a compositionally graded CrNx thin film

2013 ◽  
Vol 542 ◽  
pp. 1-4 ◽  
Author(s):  
M. Bartosik ◽  
R. Daniel ◽  
C. Mitterer ◽  
I. Matko ◽  
M. Burghammer ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Cross Sectional ◽  
X Ray

scholarly journals Synchrotron X-ray Microdiffraction Images of Polarization Switching in Epitaxial PZT Capacitors with Pt and SrRuO3 Top Electrodes

2003 ◽  
Vol 784 ◽  
Author(s):  
Dal-Hyun Do ◽  
Dong Min Kim ◽  
Chang-Beom Eom ◽  
Eric M. Dufresne ◽  
Eric D. Isaacs ◽  
...  
Keyword(s):  
Thin Film ◽  
Bottom Electrode ◽  
Sputter Deposition ◽  
Ferroelectric Polarization ◽  
X Rays ◽  
X Ray ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Switchable Polarization

ABSTRACTThe evolution of stored ferroelectric polarization in PZT thin film capacitors was imaged using synchrotron x-ray microdiffraction with a submicron-diameter focused incident x-ray beam. To form the capacitors, an epitaxial Pb(Zr,Ti)O3 (PZT) thin film was deposited on an epitaxially-grown conductive SrRuO3 (SRO) bottom electrode on a SrTiO3 (STO) (001) substrate. Polycrystalline SRO or Pt top electrodes were prepared by sputter deposition through a shadow mask and subsequent annealing. The intensity of x-ray reflections from the PZT film depended on the local ferroelectric polarization. With 10 keV x-rays, regions of opposite polarization differed in intensity by 26% in our PZT capacitor with an SRO top electrode. Devices with SRO electrodes showed just a 25% decrease in the remnant polarization after 107 switching cycles. In devices with Pt top electrodes, however, the switchable polarization decreased a by 70% after only 5×104 cycles.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Multilayer Coatings for Focusing Hard X-ray Telescopes

1998 ◽  
Vol 551 ◽  
Author(s):  
A. Ivan ◽  
R. Bruni ◽  
K. Byun ◽  
J. Everett ◽  
P. Gorenstein ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Single Layer ◽  
Multilayer Coatings ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Auger Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Specular Reflectivity

AbstractSeveral multilayer test coatings for hard X-ray telescopes were fabricated using DC magnetron sputtering. The process parameters were selected from a series of trials of single layer depositions. The samples were characterized using X-ray specular reflectivity scans, AFM, and cross-sectional TEM. Additional measurements (stylus profilometry, RBS, and Auger analysis) were used in the optimization of the deposition rate and of the thin film properties (density, composition, surface/interface microroughness). The X-ray reflectivity scans showed that the combinations of reflector and spacer materials tested so far (W/Si and W/C) are suited for graded d-spacing multilayer coatings that present a constant reflectivity bandpass up to 70 keV.

In situ fixed angle X-ray reflectivity study of sputter-deposited amorphous LaNiO3 thin film on Si substrate

1998 ◽  
Vol 248 (1-4) ◽  
pp. 109-114 ◽  
Author(s):  
Chih-Hao Lee ◽  
Hsin-Yi Lee ◽  
K.S. Liang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Fixed Angle ◽  
X Ray ◽  
Sputter Deposited
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