ZnO:Sb/ZnO:Ga Light Emitting Diode onc-Plane Sapphire by Molecular Beam Epitaxy

2010 ◽  
Vol 3 (3) ◽  
pp. 032101 ◽  
Author(s):  
Zheng Yang ◽  
Sheng Chu ◽  
Winnie V. Chen ◽  
Lin Li ◽  
Jieying Kong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Light Emitting

Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy

2008 ◽  
Vol 5 (9) ◽  
pp. 3069-3072 ◽  
Author(s):  
Hiroto Sekiguchi ◽  
Kei Kato ◽  
Akihiko Kikuchi ◽  
Katsumi Kishino
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Rf Plasma ◽  
Light Emitting

Monolithic 1.3 [micro sign]m resonant cavity light emitting diode grown by solid source molecular beam epitaxy

1998 ◽  
Vol 34 (15) ◽  
pp. 1519 ◽  
Author(s):  
M. Jalonen ◽  
J. Köngäs ◽  
M. Toivonen ◽  
P. Savolainen ◽  
S. Orsila ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Light Emitting

High-Power 1.3-$\mu$m Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy

2007 ◽  
Vol 19 (2) ◽  
pp. 109-111 ◽  
Author(s):  
S. K. Ray ◽  
T. L. Choi ◽  
K. M. Groom ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
High Power ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Light Emitting

A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

2014 ◽  
Vol 2 (21) ◽  
pp. 4112-4116 ◽  
Author(s):  
Wenliang Wang ◽  
Yunhao Lin ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Shizhong Zhiou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Light Emitting ◽  
New System

High-quality nonpolar m-plane GaN-based light-emitting diode (LED) wafers have been deposited on LiGaO2(100) substrates by a combination of pulsed laser deposition and molecular beam epitaxy technologies.

Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy

2005 ◽  
Vol 44 (6A) ◽  
pp. 3951-3953 ◽  
Author(s):  
Tsuyoshi Sunohara ◽  
Cheng Li ◽  
Yoshinori Ozawa ◽  
Takashi Suemasu ◽  
Fumio Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Active Region ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Light Emitting

Growth Conditions of Erbium-Oxygen-Doped Silicon Grown by MBE

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Stimmer ◽  
A. Reittinger ◽  
G. Abstreiter ◽  
H. Holzbrecher ◽  
Ch. Buchal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Systematic Study ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Conditions ◽  
Light Emitting ◽  
Doped Silicon

AbstractWe report on a systematic study of the growth parameters of erbium-oxygen-doped silicon grown by molecular beam epitaxy. The surface quality of the grown layers was measured in situ by RHEED. The samples were characterized by photoluminescence measurements and SIMS. An Er-O-doped Si light emitting diode grown with the optimized parameters is presented.

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