Visualization of Grain Boundary as Blocking Layer for Oxygen Tracer Diffusion and a Proposed Defect Model in Non Doped BaTiO3Ceramics

2011 ◽  
Vol 4 (5) ◽  
pp. 055801 ◽  
Author(s):  
Ken Watanabe ◽  
Isao Sakaguchi ◽  
Shunichi Hishita ◽  
Naoki Ohashi ◽  
Hajime Haneda
2013 ◽  
Vol 566 ◽  
pp. 262-265 ◽  
Author(s):  
Ken Watanabe ◽  
I. Sakaguchi ◽  
S. Hishita ◽  
H. Haneda ◽  
N. Ohashi

We investigated the effect of Zr impurities on the oxygen diffusion pathway in BaTiO3 ceramics by using an ion-imaging technique. Zr impurities were introduced into BaTiO3 ceramics by a planetary ball milling process. The oxygen tracer diffused quickly from the surface up to the grain boundary and then appeared as discontinuous steps at the grain boundary. The results indicate that the grain boundary acted as a blocking layer against oxygen diffusion. The blocking for oxygen diffusion at the grain boundary is thought to originate during the formation and distribution of complex defects between the charged oxygen vacancies and the Ba vacancies near the grain boundary.


2017 ◽  
Vol 5 (38) ◽  
pp. 20334-20350 ◽  
Author(s):  
Roger A. De Souza

Chemically reasonable limits to the rates of oxygen tracer diffusion and oxygen surface exchange in acceptor-doped oxides are examined.


1991 ◽  
Vol 59 (6) ◽  
pp. 724-726 ◽  
Author(s):  
S. B. Wong ◽  
J. J. Vajo ◽  
A. T. Hunter ◽  
C. W. Nieh

2019 ◽  
Vol 21 (8) ◽  
pp. 4268-4275 ◽  
Author(s):  
Alexandra von der Heiden ◽  
Manuel Bornhöfft ◽  
Joachim Mayer ◽  
Manfred Martin

We established a TTT diagram of crystallisation of gallium oxide. Determination of oxygen tracer diffusion coefficients by IEDP/ToF-SIMS allowed us to access the activation energy for amorphous GaO1.5 at low temperatures.


2001 ◽  
Vol 351 (4) ◽  
pp. 357-362 ◽  
Author(s):  
S. Tsukui ◽  
M. Adachi ◽  
R. Oshima ◽  
H. Nakajima ◽  
F. Toujou ◽  
...  

1993 ◽  
Vol 310 ◽  
Author(s):  
John J. Vajo ◽  
L.A. Momoda ◽  
S.B. Wong ◽  
G.S. Kamath

AbstractWe have studied oxygen diffusion in thin films of Pb(Zr,Ti)O3 on Pt/Ti/SiO2/Si <100> multilayer substrates using 18O as a tracer. The PZT films were synthesized using the sol-gel technique and crystallized in air at 650° C for 30 minutes. Diffusion experiments were conducted in one atmosphere of 18O2 at tmipertures between 400-600°C, the extent of exchange was monitored using secondary ion mass spectromentry. Exchange profiles were modeled using solutions of the diffusion equation with boundary conditions for a layer with finite thickness. Significant exchange (>60%) of 16O by 18O was measured after treatment under conditions similar to those used for crystallization. At low levels of exchange, oxygen diffusion does not follow a simple Fickian profile and differences exist between nominally identical films. These results suggest that oxygen exchange is sensitive to the film's microstructure.


1996 ◽  
Vol 124 (1) ◽  
pp. 195-197 ◽  
Author(s):  
Isao Sakaguchi ◽  
Hajime Haneda

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