Oxygen Tracer Diffusion in Sol-Gel Derived Pb(Zr,Ti)O3 thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
John J. Vajo ◽  
L.A. Momoda ◽  
S.B. Wong ◽  
G.S. Kamath
Keyword(s):  
Thin Films ◽  
Oxygen Diffusion ◽  
Sol Gel ◽  
Finite Thickness ◽  
Tracer Diffusion ◽  
Pzt Films ◽  
Gel Technique ◽  
Low Levels ◽  
Secondary Ion ◽  
Oxygen Tracer

AbstractWe have studied oxygen diffusion in thin films of Pb(Zr,Ti)O3 on Pt/Ti/SiO2/Si <100> multilayer substrates using 18O as a tracer. The PZT films were synthesized using the sol-gel technique and crystallized in air at 650° C for 30 minutes. Diffusion experiments were conducted in one atmosphere of 18O2 at tmipertures between 400-600°C, the extent of exchange was monitored using secondary ion mass spectromentry. Exchange profiles were modeled using solutions of the diffusion equation with boundary conditions for a layer with finite thickness. Significant exchange (>60%) of 16O by 18O was measured after treatment under conditions similar to those used for crystallization. At low levels of exchange, oxygen diffusion does not follow a simple Fickian profile and differences exist between nominally identical films. These results suggest that oxygen exchange is sensitive to the film's microstructure.

Preparation of PbZrxTi1−xO3 Films on Si Substrates Using SrTiO3 Buffer Layers

1994 ◽  
Vol 361 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Kensuke Itani ◽  
Bum-Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Buffer Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Buffer Layers ◽  
Si Substrates ◽  
Pzt Film ◽  
Pzt Films ◽  
Evaporation Technique ◽  
Gel Technique ◽  
Secondary Ion

ABSTRACTWe report the preparation of PbZrxTi1−xO3 (PZT) films on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer layers and PZT films were formed on Si substrates by the electron-beam assisted vacuum evaporation technique and sol-gel technique, respectively. By evaporating a thin (8nm) metal Sr layer prior to the STO deposition, which deoxidizes the SiO2 layer at the Si surface, (100)- and (111)-oriented STO thin films can be grown on Si(100) and (111) substrates, respectively. It is shown that a strongly (100)-oriented PZT film is grown on STO(100)/Si(100), whereas a strongly (111)-oriented PZT film is obtained on STO(111)/Si(111). It is also found that the STO buffer layer remains intact even after the PZT deposition. Secondary ion mass spectrometry (SIMS) analysis showed that the STO barrier layer was effective in preventing diffusion of Pb into the Si substrate.

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Yuhuan Xu ◽  
Chih-Hsing Cheng ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Substrate ◽  
Pzt Thin Films ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Technique

ABSTRACTPb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

Oxygen Tracer Diffusion in A-Axis Oriented ZnO Thin Films Grown on (01-12) Sapphire by Pulsed Laser Deposition

2013 ◽  
Vol 566 ◽  
pp. 266-270
Author(s):  
Isao Sakaguchi ◽  
Ken Watanabe ◽  
Yutaka Adachi ◽  
Takeshi Ohgaki ◽  
Shunichi Hishita ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Diffusion ◽  
Pulsed Laser ◽  
Tracer Diffusion ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Sapphire Substrates ◽  
Tracer Diffusion Coefficients ◽  
Oxygen Tracer

The a-axis oriented ZnO thin films deposited on sapphire substrates by pulsed laser deposition were studied to investigate the effects of pre-annealing on oxygen diffusion. The effect was as follows: the oxygen diffusion coefficient decreased, and the oxygen concentration in the tailing regions of the profiles reduced. Ion images of an oxygen tracer revealed the high-diffusivity paths for oxygen tracer diffusion. The temperature dependence of oxygen tracer diffusion coefficients (Db) in as-deposited and pre-annealed thin films were determined to be Db [cm2/ = 9.2x102 exp (- 405 [kJ/mo / RT) and Db [cm2/ = 1.8x103 exp (- 418 [kJ/mo / RT), respectively. On basis of these results, the crystal orientation on Db and the mechanism for oxygen diffusion were discussed.

Nanostructured TiO2 thin films for DSSCs prepared by sol gel technique

2017 ◽  
Author(s):  
Siti Noraini Abu Bakar ◽  
Huda Abdullah ◽  
Kamisah Mohamad Mahbor
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Nanostructured Tio2 ◽  
Gel Technique

Structural and Magnetic Properties of Mn/Fe co-Doped ZnO Thin Films Prepared by Sol–Gel Technique

2014 ◽  
Vol 50 (8) ◽  
pp. 1-4 ◽  
Author(s):  
Robina Ashraf ◽  
Saira Riaz ◽  
Mahwish Bashir ◽  
Usman Khan ◽  
Shahzad Naseem
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Technique ◽  
Structural And Magnetic Properties ◽  
Doped Zno ◽  
Co Doped

Microstructures and fatigue-free properties of the La3+ and Nd3+ doped Bi4Ti3O12 thin films prepared by modified sol-gel technique

2008 ◽  
Vol 51 (11) ◽  
pp. 1843-1849 ◽  
Author(s):  
MeiYa Li ◽  
Ling Pei ◽  
Jun Liu ◽  
BenFang Yu ◽  
DongYun Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Technique

Cadmium oxide, indium oxide and cadmium indate thin films obtained by the sol–gel technique

2009 ◽  
Vol 518 (4) ◽  
pp. 1114-1118 ◽  
Author(s):  
M.A. Flores Mendoza ◽  
R. Castanedo Pérez ◽  
G. Torres Delgado ◽  
O. Zelaya Angel
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Sol Gel ◽  
Cadmium Oxide ◽  
Gel Technique

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

The study of BiCrxFe1−xO3 thin films synthesized by sol–gel technique

2010 ◽  
Vol 30 (2) ◽  
pp. 271-275 ◽  
Author(s):  
Yuhua Zhang ◽  
Shengwen Yu ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Technique
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