High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO$_{3}$/BiFe$_{0.95}$Mn$_{0.05}$O$_{3}$/SrRuO$_{3}$/Pt Ferroelectric Capacitors Formed on SiO$_{2}$-Coated Si Substrates

ABSTRACTNatural-superlattice-structured Bi3TiNbO9–Bi4Ti3O12 (m =2–3) (BTN–BIT) films have been grown on Pt/TiO2/SiO2/Si substrates at 400 °C to 550 °C by pulsed laser deposition (PLD) using BTN–BIT (1 mol:1 mol) target, and were post-annealed in O2 for 45 minutes at 750 °C. BTN–BIT films prepared above 500 °C have single phase whose c lattice parameter is estimated to 8.300 nm in consideration of periodicity of lattice structures. This lattice constant is very close to the value (8.316 nm) of that of two unit cells of BTN and one unit cell of BIT, that is 2–1 superlattice structure of BTN–BIT. The BTN–BIT film with 2–1 superlattice structure has large remanent polarization (2Pr = 50 μC/cm2) and large coercive field (2Ec= 350 kV/cm). La-doped BTN–BIT thin film has also large remanent polarization (2Pr = 52 μC/cm2) and relatively small coercive field (2Ec= 220 kV/cm). The La-doped BTN–BIT film is fatigue-free on Pt electrodes up to 1010 switching cycles.

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Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.197-198.1781 ◽

2011 ◽

Vol 197-198 ◽

pp. 1781-1784

Author(s):

Hua Wang ◽

Jian Li ◽

Ji Wen Xu ◽

Ling Yang ◽

Shang Ju Zhou

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Annealing Temperature ◽

Ferroelectric Properties ◽

Sol Gel ◽

Hysteresis Loops ◽

Si Substrates ◽

Gel Processing ◽

Coercive Electric Field ◽

Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(111)/TiOx/SiO2/Si substrates

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2009.03.170 ◽

2009 ◽

Vol 482 (1-2) ◽

pp. 253-255 ◽

Cited By ~ 14

Author(s):

N.K. Karan ◽

R. Thomas ◽

S.P. Pavunny ◽

J.J. Saavedra-Arias ◽

N.M. Murari ◽

...

Keyword(s):

Thin Films ◽

Grain Growth ◽

Pzt Thin Films ◽

Si Substrates ◽

Fatigue Endurance

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Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.378 ◽

2014 ◽

Vol 633 ◽

pp. 378-381

Author(s):

Bei Li ◽

X.B. Liu ◽

M. Chen ◽

X.A. Mei

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

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