Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(111)/TiOx/SiO2/Si substrates

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

Download Full-text

Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

MRS Proceedings ◽

10.1557/proc-243-519 ◽

1991 ◽

Vol 243 ◽

Author(s):

C. K. Chiang ◽

W. Wong-Ng ◽

L. P. Cook ◽

P. K. Schenck ◽

H. M. Lee ◽

...

Keyword(s):

Thin Films ◽

Amorphous Material ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Linear Shrinkage ◽

Laser Deposition ◽

Amorphous Films ◽

Pzt Thin Films ◽

Si Substrates ◽

Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

Download Full-text

Integrated 32 × 32 pyroelectric ir sensor array in nmos/jfet circuitry using highly (001) oriented pzt thin films on epitaxial y-al2o3/si substrates

2008 17th IEEE International Symposium on the Applications of Ferroelectrics ◽

10.1109/isaf.2008.4693727 ◽

2008 ◽

Author(s):

N. Kawazu ◽

K. Kikuchi ◽

D. Akai ◽

K. Sawada ◽

M. Ishida

Keyword(s):

Thin Films ◽

Sensor Array ◽

Pzt Thin Films ◽

Si Substrates ◽

Ir Sensor

Download Full-text

1104 Micro-actuator using piezoelectric PZT thin films deposited on Si substrates

The Proceedings of the Conference on Information Intelligence and Precision Equipment IIP ◽

10.1299/jsmeiip.2005.40 ◽

2005 ◽

Vol 2005 (0) ◽

pp. 40-41

Author(s):

Hironobu ENDO ◽

Yoshiro TAZAWA ◽

Takaaki SUZUKI ◽

Isaku KANNO ◽

Hidetoshi KOTERA

Keyword(s):

Thin Films ◽

Pzt Thin Films ◽

Micro Actuator ◽

Si Substrates

Download Full-text

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

MRS Proceedings ◽

10.1557/proc-493-189 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 2

Author(s):

C. H. Lin ◽

B. M. Yen ◽

Haydn Chen ◽

T. B. Wu ◽

H. C. Kuo ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Fatigue Behavior ◽

Chemical Vapor ◽

Dielectric Constants ◽

Preferential Orientation ◽

Organic Chemical ◽

Pzt Thin Films ◽

Si Substrates ◽

Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

Download Full-text

Preparation of pzt thin films on Pt/Ti/SiO2 and Pt/SiO2 Substrates by ECR Plasma Enhanced DC Magnetron Multi-target Reactive Sputtering

MRS Proceedings ◽

10.1557/proc-441-205 ◽

1996 ◽

Vol 441 ◽

Author(s):

Sung-Tae Kim ◽

Hyun-Ho Kim ◽

Moon-Yong Lee ◽

Won-Jong Lee

Keyword(s):

Thin Films ◽

Lead Zirconate Titanate ◽

Electron Cyclotron Resonance ◽

Perovskite Phase ◽

Early Stage ◽

Reactive Sputtering ◽

Deposition Process ◽

Pzt Thin Films ◽

Si Substrates ◽

Ecr Plasma

AbstractPerovskite-phase lead zirconate titanate (PZT) thin films were fabricated at 4751C by the electron cyclotron resonance (ECR) plasma enhanced DC magnetron multi-target reactive sputtering method on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates. Stoichiometric perovskite PZT films were readily obtained on Pt/Ti/SiO2/Si substrates because Ti atoms which were out-diffused to the Pt surface facilitated Pb incorporation by forming lead titanate at the early stage of deposition process. Activation of oxygen by ECR plasma facilitated the oxidation reaction and Pb incorporation into the film. Thus perovskite-phase PZT can be obtained on the Pt/SiO2/Si substrate.

Download Full-text

Microstructural Properties of PZT Thin Films Deposited on LaNiO3-Coated Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.555.315 ◽

2007 ◽

Vol 555 ◽

pp. 315-320 ◽

Cited By ~ 1

Author(s):

Z. Branković ◽

G. Branković ◽

K. Vojisavljević ◽

M. Počuča ◽

Tatjana Srećković ◽

...

Keyword(s):

Thin Films ◽

Thermal Treatment ◽

Pechini Method ◽

Slow Heating ◽

Microstructural Properties ◽

Pzt Thin Films ◽

Si Substrates ◽

Treatment Conditions ◽

Pzt Films ◽

Size And Morphology

The modified polymeric precursor method (Pechini method) was successfully used for the preparation of epitaxial and polycrystalline ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Films were deposited on LaNiO3 (LNO) – coated silicium (1 0 0) and platinum substrates (Pt (1 1 1)/Ti/SiO2/Si) by spin coating technique. LNO electrodes were also prepared by the Pechini method and treated under different thermal treatment conditions to obtain films with different structural and microstructural properties. Investigation of PZT microstructure was performed as a function of orientation and morphology of the bottom electrode, as well as of thermal treatment conditions. Grain size and morphology were analyzed by AFM, while the quality and orientation of PZT films were determined by GIXRD analysis. It has been found that the proposed thermal treatment on a hot plate, with slow heating rate and long annealing time, can result in the formation of epitaxial PZT films on Si and LNO-coated Si substrates.

Download Full-text

Preferred Orientation Controlled Giant Grain Growth of Platinum Thin Films on SiO2/Si Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1 ◽

2001 ◽

Vol 40 (Part 2, No. 1A/B) ◽

pp. L1-L3 ◽

Cited By ~ 11

Author(s):

Dong-Su Lee ◽

Dong-Yeon Park ◽

Hyun-Jung Woo ◽

Seung-Hyun Kim ◽

Jowoong Ha ◽

...

Keyword(s):

Thin Films ◽

Grain Growth ◽

Preferred Orientation ◽

Si Substrates

Download Full-text

OPTIMIZATION OF PROCESSING TEMPERATURE TO ACHIEVE HIGH QUALITY SOL–GEL-DERIVED PZT THIN FILM

International Journal of Nanoscience ◽

10.1142/s0219581x09006134 ◽

2009 ◽

Vol 08 (03) ◽

pp. 299-303 ◽

Cited By ~ 1

Author(s):

SAJJAD DEHGHANI ◽

ABDOLGHAFAR BARZEGAR ◽

MOHAMMAD HOSSEIN SHEIKHI

Keyword(s):

Thin Films ◽

Spin Coating ◽

Perovskite Phase ◽

Sol Gel ◽

Morphological Properties ◽

Processing Temperature ◽

High Quality ◽

Pzt Thin Films ◽

Polarization Voltage ◽

Si Substrates

Ferroelectric PbZr 1-x Ti x O 3 (PZT) thin films have been extensively investigated because of their excellent piezoelectric, pyroelectric, ferroelectric, and dielectric properties. Sol–gel synthesis and spin-coating are popular routes to the formation of high quality, dense, and crack-free thin films. In this work, high quality, crack-free PZT thin films have been prepared by sol–gel method via spin-coating on Pt/Ti/SiO2/Si substrate by different temperature processings. The crystallographic and morphological properties of the films have been analyzed by X-ray diffraction and scanning electron microscopy. The electrical properties of thin films including the permittivity, loss tangent, and polarization–voltage hysteresis loop were measured and compared for different films. Finally, by optimizing temperature processing, highly textured and high quality films of PZT with perovskite phase were obtained on Pt/Ti/SiO2/Si substrates.

Download Full-text