Electrical and Optical Properties of Boron Doped Amorphous Si Prepared by CVD Method

1978 ◽  
Vol 17 (10) ◽  
pp. 1897-1898 ◽  
Author(s):  
Takahiro Makino ◽  
Hiroaki Nakamura
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Cvd Method ◽  
Boron Doped ◽  
Amorphous Si

Comparison of Properties of a-Si1−x Gex:H and a-Si1−x Gex:H:F

1987 ◽  
Vol 95 ◽  
Author(s):  
K. D. Mackenzie ◽  
W. Paul
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Amorphous Si

AbstractThe structural, electrical and optical properties of amorphous Si-Ge alloys prepared either from mixtures of hydrides or of fluorides will be compared. It will be shown that the majority of many properties studied are essentially the same, the major exceptions being the structure of thin films used for TEM investigation, and the photocurrents developed between contacts in a coplanar configuration. Possible explanations for the result of including fluorine in the preparation plasma will be discussed.

Structural, electrical and optical properties of boron doped ZnO thin films using LSMCD method at room temperature

2009 ◽  
Vol 97 (4) ◽  
pp. 821-828 ◽  
Author(s):  
Gilho Kim ◽  
Jungsik Bang ◽  
Yunseok Kim ◽  
S. K. Rout ◽  
Seong Ihl Woo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Boron Doped ◽  
Doped Zno
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