Enhanced electrical and optical properties of boron-doped ZnO films grown by low pressure chemical vapor deposition for amorphous silicon solar cells

2016 ◽  
Vol 42 (1) ◽  
pp. 1361-1365 ◽  
Author(s):  
Wang Li ◽  
Yingyi Li ◽  
Guoping Du ◽  
Nan Chen ◽  
Shiyong Liu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Solar Cells ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Boron Doped ◽  
Pressure Chemical ◽  
Doped Zno

Boron Doping Effects on the Electro-optical Properties of Zinc Oxide Thin Films Deposited by Low-Pressure Chemical Vapor Deposition Process

2006 ◽  
Vol 928 ◽  
Author(s):  
Jerome Steinhauser ◽  
Sylvie Faÿ ◽  
Romain Schlüchter ◽  
Seung Yeop Myong ◽  
Evelyne Vallat ◽  
...  
Keyword(s):  
Grain Size ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Free Carrier ◽  
Zno Films ◽  
Pressure Chemical ◽  
Doped Zno

ABSTRACTBoron-doped zinc oxide (ZnO) films deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) technique are used as Transparent Conductive Oxide (TCO) to contact thin-film silicon solar cells. In this paper, the effect of boron introduced as dopant during ZnO formation is studied. These films are highly transparent in the visible range, whereas in the near infrared region their transmittance decreases with the increase of boron content due to free carrier absorption (FCA). A shifting of the fondamental band gap is also observed. The resistivity decreases of about one order of magnitude with the increase of the doping ratio ([B2H6]/[DEZ]) from 0 to 2. This resistivity drop is mainly due to an increase of the free carrier concentration. In low doped samples, Hall mobility increases with grain size, whereas it shows no grain size dependence in highly doped layers. This suggest that the scattering by grain-boundary is the main limiting factor for transport in low doped ZnO samples, whereas in highly doped ZnO films transport is controlled by the ionized impurity scattering within the grains.

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