Effects of a Negative Self-Bias on the Growth of Cubic Boron Nitride Prepared by Plasma Chemical Vapor Deposition

Cubic boron nitride (cBN) film was deposited on Co-containing WC substrates by dc jet plasma chemical vapor deposition from an Ar–N2–BF3–H2 gas system. The formation of cobalt nitrides was observed at interface, and the hindrance of Co on cBN growth was demonstrated. Growth temperature and etching treatment of the substrate before deposition influenced the cBN growth greatly. At 1050 °C, cBN films were obtained on etched substrates but not on unetched substrates. At 1090 °C, cBN films were not obtained even on etched substrates. At 960 °C, cBN films deposited even on unetched substrate but the films always peeled off after exposing to air. The film quality of cBN deposited at 960 °C is better than that deposited at 1050 °C.

Download Full-text

Reduced bias synthesis of cubic boron nitride thin films by magnetically enhanced inductively coupled radio frequency plasma chemical vapor deposition

Materials Letters ◽

10.1016/s0167-577x(02)01007-8 ◽

2003 ◽

Vol 57 (8) ◽

pp. 1459-1463 ◽

Cited By ~ 1

Author(s):

K.K. Chattopadhyay ◽

A.N. Banerjee ◽

S. Kundoo

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cubic Boron Nitride ◽

Chemical Vapor ◽

Radio Frequency Plasma ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Inductively Coupled ◽

Frequency Plasma

Download Full-text

Influence of the Plasma Condition on the Morphology of Vertically Aligned Carbon Nanotube Films Grown by RF Plasma Chemical Vapor Deposition

Surface Review and Letters ◽

10.1142/s0218625x03005505 ◽

2003 ◽

Vol 10 (04) ◽

pp. 611-615 ◽

Cited By ~ 4

Author(s):

Takashi Ikuno ◽

Syunji Takahashi ◽

Kazunori Kamada ◽

Shigeharu Ohkura ◽

Shin-Ich Honda ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Carbon Nanotube ◽

Vapor Deposition ◽

Chemical Vapor ◽

Rf Plasma ◽

Plasma Condition ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Self Bias ◽

Vertically Aligned

Vertically aligned carbon nanotube (VACNT) films have been grown by RF plasma chemical vapor deposition (RF-PECVD) with a controlling plasma condition. From the in situ optical emission spectroscopy (OES) and self-bias measurements, we have investigated the relationship between the morphology of VACNTs and the plasma condition in PECVD. CH radical and atomic hydrogen peaks were prominent in the OES spectra of CH 4 plasma. The plasma condition was changed by varying the interelectrode distance in PECVD. With increasing interelectrode distance, the diameter and density of VACNTs increased as a result of the increase in plasma density, the fraction of CH radicals, and self-bias. It is likely that the fraction of CH radicals in plasma influences promotion of the growth of CNTs, while the self-bias induces their vertical alignment.

Download Full-text

Routes to Diamond Heteroepiitaxy

MRS Proceedings ◽

10.1557/proc-250-339 ◽

1991 ◽

Vol 250 ◽

Cited By ~ 2

Author(s):

Andrzej Badzian ◽

Teresa Badzian

Keyword(s):

Chemical Vapor Deposition ◽

Boron Nitride ◽

Vapor Deposition ◽

Microwave Plasma ◽

Cubic Boron Nitride ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Plasma Chemical Vapor Deposition ◽

Nickel Hydride ◽

The Status

AbstractThis paper reviews the status of diamond heteroepitaxy approached by chemical vapor deposition and by physical methods. Reported are experiments with cubic boron nitride and nickel conducted with the help of microwave plasma chemical vapor deposition. X-ray diffraction data confirm diamond heteroepitaxy on the (111) faces of cubic boron nitride crystals. Heteroepitaxy on nickel was not demonstrated yet nevertheless suppression of graphite nucleation was achieved by formation of nickel hydride.

Download Full-text