New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current

1994 ◽  
Vol 33 (Part 1, No. 5A) ◽  
pp. 2513-2514 ◽  
Author(s):  
Jyh-Kuang Lin ◽  
Chun-Yen Chang ◽  
Heng-Sheng Huang ◽  
Kun-Luh Chen ◽  
Dah-Chih Kuo
Keyword(s):  
Leakage Current ◽  
Memory Device ◽  
Read Only Memory ◽  
Nitride Oxide ◽  
Cell Leakage

Atmos—An electrically reprogrammable read-only memory device

1974 ◽  
Vol 21 (10) ◽  
pp. 631-636 ◽  
Author(s):  
J.F. Verwey ◽  
R.P. Kramer
Keyword(s):  
Memory Device ◽  
Read Only Memory

Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Memory Device with Different Tunneling Oxide Thicknesses

2011 ◽  
Vol 11 (7) ◽  
pp. 6109-6113
Author(s):  
Hyun Joo Kim ◽  
Joo Hyung You ◽  
Sung Ho Kim ◽  
Kae Dal Kwack ◽  
Tae Whan Kim
Keyword(s):  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Oxide

A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2943-2947
Author(s):  
Chih-Jen Huang ◽  
Yun-Chang Liu ◽  
Mu-Chun Wang ◽  
John Caywood ◽  
Shi-Fang Hong ◽  
...  
Keyword(s):  
Read Only Memory ◽  
Nitride Oxide

Leakage Current Reduction Mechanism of Oxide–Nitride–Oxide Inter-Poly Dielectrics through the Post Plasma Oxidation Treatment

2011 ◽  
Vol 50 (4R) ◽  
pp. 041501 ◽  
Author(s):  
Woong Lee ◽  
Jeonggeun Jee ◽  
Dae-Han Yoo ◽  
Eun-Young Lee ◽  
Jinkwon Bok ◽  
...  
Keyword(s):  
Leakage Current ◽  
Reduction Mechanism ◽  
Plasma Oxidation ◽  
Oxidation Treatment ◽  
Current Reduction ◽  
Nitride Oxide

Polycrystalline Silocon-Oxide-Nitride-Oxide-Silicon Flash Memory on SiO2 and Si3N4 Buffer Layer for System on Panels Application

2013 ◽  
Vol 658 ◽  
pp. 120-123
Author(s):  
Sang Youl Lee ◽  
Jae Sub Oh ◽  
Seung Dong Yang ◽  
Ho Jin Yun ◽  
Kwang Seok Jeong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Buffer Layer ◽  
Flash Memory ◽  
Polycrystalline Silicon ◽  
Silicon Oxide ◽  
Memory Device ◽  
Nitride Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitride Oxide

For the system on panel applications, we fabricated and analyzed the polycrystalline silicon (poly-Si) silicon-oxide-nitride-oxide-silicon (SONOS) memory device on different buffer layer such as oxide or nitride. The threshold voltage (VT) and transconductance (gm) are extracted from each device and the X-Ray Diffraction (XRD) measurement is carried out to interpret these characteristics. The results show the device on oxide layer has higher mobility and lower VT than on nitride layer. From the XRD spectra, it can be explained by the fact that the grain size of poly-Si on oxide layer has larger than on nitride layer. The both devices show program/erase characteristics as the potential of SOP memory devices.

Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

2006 ◽  
Vol 89 (16) ◽  
pp. 163514 ◽  
Author(s):  
Shaw-Hung Gu ◽  
Tahui Wang ◽  
Wen-Pin Lu ◽  
Yen-Hui Joseph Ku ◽  
Chih-Yuan Lu
Keyword(s):  
Leakage Current ◽  
Flash Memory ◽  
Silicon Oxide ◽  
Trap Density ◽  
Stress Induced Leakage Current ◽  
Nitride Oxide
Sign in / Sign up

Export Citation Format

Share Document