A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2943-2947
Author(s):  
Chih-Jen Huang ◽  
Yun-Chang Liu ◽  
Mu-Chun Wang ◽  
John Caywood ◽  
Shi-Fang Hong ◽  
...  
Keyword(s):  
Read Only Memory ◽  
Nitride Oxide

New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current

1994 ◽  
Vol 33 (Part 1, No. 5A) ◽  
pp. 2513-2514 ◽  
Author(s):  
Jyh-Kuang Lin ◽  
Chun-Yen Chang ◽  
Heng-Sheng Huang ◽  
Kun-Luh Chen ◽  
Dah-Chih Kuo
Keyword(s):  
Leakage Current ◽  
Memory Device ◽  
Read Only Memory ◽  
Nitride Oxide ◽  
Cell Leakage

A Process Induced Failure Mechanism in the EEPROM Cell - Its Identification and Solution

1997 ◽  
Author(s):  
Y. L. Tsang ◽  
C. Cavins
Keyword(s):  
Failure Mechanism ◽  
High Voltage ◽  
Floating Gate ◽  
Transistor Channel ◽  
Ion Etching ◽  
Process Flow ◽  
Floating Gate Transistor ◽  
Read Only Memory ◽  
Nitride Oxide ◽  
Enhanced Yield

Abstract A 0.8 μm technology based Electrical Erasable, Programmable Read-Only Memory (EEPROM) cell having a high voltage select transistor and a floating gate transistor with a control gate on top as used in the Motorola Neuron product chip set was analyzed for program and erase failure. Silicon pitting in the select transistor channel was identified to be the failure mechanism. The silicon pitting was experimentally confirmed to be attributed to the penetration of the bottom oxide in the oxide-nitride-oxide (ONO) structure due to the nitride removal using reactive ion etching (RIE). A modified process flow with a thicker sacrificial oxide under the nitride eliminated the pitting failure mechanism and enhanced yield and reliability.

scholarly journals A Digital Improvement—Trimming a Digital Temperature Sensor with EEPROM Reprogrammable Fuses

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1700
Author(s):  
Anca Mihaela Vasile (Dragan) ◽  
Alina Negut ◽  
Adrian Tache ◽  
Gheorghe Brezeanu
Keyword(s):  
Standard Deviation ◽  
Power Supply ◽  
Temperature Sensor ◽  
Experimental Results ◽  
Temperature Error ◽  
Thermal Sensor ◽  
Memory Cells ◽  
Temperature Range ◽  
Read Only Memory ◽  
Digital Temperature Sensor

An EEPROM (electrically erasable programmable read-only memory) reprogrammable fuse for trimming a digital temperature sensor is designed in a 0.18-µm CMOS EEPROM. The fuse uses EEPROM memory cells, which allow multiple programming cycles by modifying the stored data on the digital trim codes applied to the thermal sensor. By reprogramming the fuse, the temperature sensor can be adjusted with an increased trim variation in order to achieve higher accuracy. Experimental results for the trimmed digital sensor showed a +1.5/−1.0 ℃ inaccuracy in the temperature range of −20 to 125 ℃ for 25 trimmed DTS samples at 1.8 V by one-point calibration. Furthermore, an average mean of 0.40 ℃ and a standard deviation of 0.70 ℃ temperature error were obtained in the same temperature range for power supply voltages from 1.7 to 1.9 V. Thus, the digital sensor exhibits similar performances for the entire power supply range of 1.7 to 3.6 V.

Development of an e-core read-only memory

1965 ◽  
Author(s):  
P. S. Sidhu ◽  
B. Bussell
Keyword(s):  
Read Only Memory

Analysis of Carrier Traps in Si3N4in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1441-1447 ◽  
Author(s):  
Hiroshi Aozasa ◽  
Ichiro Fujiwara ◽  
Akihiro Nakamura ◽  
Yasutoshi Komatsu
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Carrier Traps ◽  
Nitride Oxide

Binary read-only-memory multiplier

1973 ◽  
Vol 9 (25) ◽  
pp. 580
Author(s):  
Chang Tien-Lin
Keyword(s):  
Read Only Memory

A Polarization Readout Method Applied to a Groove Baseband Recording Optical Read-Only Memory Discs

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 1704-1710 ◽  
Author(s):  
Seiji Kobayashi ◽  
Hisayuki Yamatsu ◽  
Yoshihiro Takemoto
Keyword(s):  
Read Only Memory
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