X-Ray Photoelectron Spectroscopy Studies of Titanium Nitride Barrier Metals Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 34 (Part 2, No. 7B) ◽  
pp. L907-L910 ◽  
Author(s):  
Y. H. Chang ◽  
S. J. Won ◽  
J.E.Oh ◽  
S. H. Paek ◽  
H.D.Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray ◽  
Spectroscopy Studies ◽  
Metalorganic Chemical

Plasma-Enhanced Metalorganic Chemical Vapor deposition of Lipon Thin Films

2011 ◽  
Vol 1313 ◽  
Author(s):  
Lamartine Meda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Ionic Conductivity ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Electrochemical Impedance ◽  
Chemical Vapor ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTLithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasmaenhanced metalorganic chemical vapor deposition (PE-MOCVD) method using triethyl phosphate [(CH2CH3)3PO4] and lithium tert-butoxide [(LiOC(CH3)3] precursors. Growth rates were between 100 and 415 Å/min, and thicknesses ranged from 1 to 2.5 μm. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy revealed approximately 6.9 at.% carbon in the films. The ionic conductivity of Lipon was measured using electrochemical impedance spectroscopy (EIS) and approximately 1.02 μS/cm was obtained, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets. An all-solid-state thin-film lithium microbattery such as Li/Lipon/LiCoO2/Au/substrate was successfully fabricated with Lipon deposited by PE-MOCVD. The battery has a capacity of ca. 22 μAh/cm2μm.

Synthesis and Characterization of Calcium Phosphate Coatings by Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 550 ◽  
Author(s):  
Y. Gao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Calcium Phosphates ◽  
Chemical Vapor ◽  
Calcium Pyrophosphate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

AbstractThin coatings of various calcium phosphates including tricalcium phosphate (TCP), calcium pyrophosphate, and hydroxyapatite were synthesized by plasma-enhanced metalorganic chemical vapor deposition (MOCVD). Structure, composition, and surface morphology of the coatings were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. All coatings were very dense and free of cracks. X- ray diffraction showed that the as-grown coatings with the Ca/P ratio of 1.5±0.5 and 1.0±0.5 were crystalline μ- TCP and pyrophosphate, respectively. However, hydroxyapatite coatings with the Ca/P ratio of ∼1.67 were amorphous. The crystalline μ-TCP and pyrophosphate coatings exhibited strong growth texture. The textured orientations varied with different growth temperatures. In addition, the microstructure of the μ-TCP coatings strongly depended on the growth temperatures.

An Environmentally Clean Liquid Precursor of Sulfur for Metalorganic Chemical Vapor Deposition (MOCVD) of Transition Metal Di-Sulfide Thin Films.

1994 ◽  
Vol 344 ◽  
Author(s):  
Prasad N. Gadgil
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Iron Pentacarbonyl ◽  
Sulfur Source ◽  
X Ray ◽  
Metalorganic Chemical

AbstractA three member ring compound propylene sulfide, C3H6S is employed as a sulfur source for the Metalorganic Chemical Vapor Deposition (MOCVD) of stoichiometric thin films of iron pyrite (FeS2). Iron pentacarbonyl Fe(CO)5, a liquid, was precursor for iron. Propylene sulfide, (PS) a liquid ( b. p. = 72–75 °C, v. p. ∼ 87 torr @ 20°C ) decomposes cleanly and quantitatively as S2 and C3H6 (propylene) above 250°C. Deposition of thin films of pyrite and their analysis by X-ray diffraction and Mossbauer and X-ray Photoelectron spectroscopy is described. Liquid state, long term stability, clean and low temperature generation of active S2 species in vapor phase and gaseous by product C3H6 which can be burned to CO2 and H2O are the key advantages offered by propylene sulfide as a sulfur source.

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

1995 ◽  
Vol 406 ◽  
Author(s):  
M. S. Gaffneyt ◽  
C. M. Reavesl ◽  
A. L Holmes ◽  
R. S. Smith ◽  
S. P. DenBaars
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Normal Operation ◽  
Growth Monitoring ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

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