X-ray photoelectron spectroscopy study of GaN and GaP surfaces annealed in PH3 and NH3 and metalorganic chemical vapor deposition growth of GaN / GaP heterostructures

ABSTRACTLithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasmaenhanced metalorganic chemical vapor deposition (PE-MOCVD) method using triethyl phosphate [(CH2CH3)3PO4] and lithium tert-butoxide [(LiOC(CH3)3] precursors. Growth rates were between 100 and 415 Å/min, and thicknesses ranged from 1 to 2.5 μm. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy revealed approximately 6.9 at.% carbon in the films. The ionic conductivity of Lipon was measured using electrochemical impedance spectroscopy (EIS) and approximately 1.02 μS/cm was obtained, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets. An all-solid-state thin-film lithium microbattery such as Li/Lipon/LiCoO2/Au/substrate was successfully fabricated with Lipon deposited by PE-MOCVD. The battery has a capacity of ca. 22 μAh/cm2μm.

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X-Ray Photoelectron Spectroscopy Studies of Titanium Nitride Barrier Metals Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l907 ◽

1995 ◽

Vol 34 (Part 2, No. 7B) ◽

pp. L907-L910 ◽

Cited By ~ 6

Author(s):

Y. H. Chang ◽

S. J. Won ◽

J.E.Oh ◽

S. H. Paek ◽

H.D.Lee ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Titanium Nitride ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

X Ray ◽

Spectroscopy Studies ◽

Metalorganic Chemical

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Synthesis and Characterization of Calcium Phosphate Coatings by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-550-361 ◽

1998 ◽

Vol 550 ◽

Cited By ~ 2

Author(s):

Y. Gao

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Metalorganic Chemical Vapor Deposition ◽

Calcium Phosphates ◽

Chemical Vapor ◽

Calcium Pyrophosphate ◽

X Ray Diffraction ◽

X Ray ◽

Metalorganic Chemical

AbstractThin coatings of various calcium phosphates including tricalcium phosphate (TCP), calcium pyrophosphate, and hydroxyapatite were synthesized by plasma-enhanced metalorganic chemical vapor deposition (MOCVD). Structure, composition, and surface morphology of the coatings were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. All coatings were very dense and free of cracks. X- ray diffraction showed that the as-grown coatings with the Ca/P ratio of 1.5±0.5 and 1.0±0.5 were crystalline μ- TCP and pyrophosphate, respectively. However, hydroxyapatite coatings with the Ca/P ratio of ∼1.67 were amorphous. The crystalline μ-TCP and pyrophosphate coatings exhibited strong growth texture. The textured orientations varied with different growth temperatures. In addition, the microstructure of the μ-TCP coatings strongly depended on the growth temperatures.

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An Environmentally Clean Liquid Precursor of Sulfur for Metalorganic Chemical Vapor Deposition (MOCVD) of Transition Metal Di-Sulfide Thin Films.

MRS Proceedings ◽

10.1557/proc-344-247 ◽

1994 ◽

Vol 344 ◽

Author(s):

Prasad N. Gadgil

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Iron Pentacarbonyl ◽

Sulfur Source ◽

X Ray ◽

Metalorganic Chemical

AbstractA three member ring compound propylene sulfide, C3H6S is employed as a sulfur source for the Metalorganic Chemical Vapor Deposition (MOCVD) of stoichiometric thin films of iron pyrite (FeS2). Iron pentacarbonyl Fe(CO)5, a liquid, was precursor for iron. Propylene sulfide, (PS) a liquid ( b. p. = 72–75 °C, v. p. ∼ 87 torr @ 20°C ) decomposes cleanly and quantitatively as S2 and C3H6 (propylene) above 250°C. Deposition of thin films of pyrite and their analysis by X-ray diffraction and Mossbauer and X-ray Photoelectron spectroscopy is described. Liquid state, long term stability, clean and low temperature generation of active S2 species in vapor phase and gaseous by product C3H6 which can be burned to CO2 and H2O are the key advantages offered by propylene sulfide as a sulfur source.

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X-Ray Photoelectron Spectroscopy Study of Si-C Film Growth by Chemical Vapor Deposition of Ethylene on Si(100)

10.21236/ada197437 ◽

1988 ◽

Author(s):

P. A. Taylor ◽

M. Bozack ◽

W. J. Choyke ◽

J. T. Yates ◽

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Film Growth ◽

Chemical Vapor ◽

Spectroscopy Study ◽

X Ray

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Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

MRS Proceedings ◽

10.1557/proc-102-77 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

P.-Y. Lu ◽

L. M. Williams ◽

C.-H. Wang ◽

S. N. G. Chu ◽

M. H. Ross

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Infrared Transmission ◽

Chemical Vapor Deposition Growth ◽

Deposition Processes ◽

Cdznte Substrates ◽

First Time ◽

Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

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Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

MRS Proceedings ◽

10.1557/proc-406-133 ◽

1995 ◽

Vol 406 ◽

Author(s):

M. S. Gaffneyt ◽

C. M. Reavesl ◽

A. L Holmes ◽

R. S. Smith ◽

S. P. DenBaars

Keyword(s):

Chemical Vapor Deposition ◽

Real Time ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Normal Operation ◽

Growth Monitoring ◽

X Ray Diffraction ◽

X Ray ◽

Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

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Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-361-355 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 6

Author(s):

D.L. Kaiser ◽

M.D. Vaudin ◽

L.D. Rotter ◽

Z.L. Wang ◽

J.P. Cline ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Electron Diffraction ◽

Harmonic Generation ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Second Harmonic ◽

Chemical Vapor ◽

X Ray ◽

Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

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