An Environmentally Clean Liquid Precursor of Sulfur for Metalorganic Chemical Vapor Deposition (MOCVD) of Transition Metal Di-Sulfide Thin Films.

Vapor Deposition ◽

Chemical Vapor ◽

Iron Pentacarbonyl ◽

Sulfur Source ◽

X Ray ◽

AbstractA three member ring compound propylene sulfide, C3H6S is employed as a sulfur source for the Metalorganic Chemical Vapor Deposition (MOCVD) of stoichiometric thin films of iron pyrite (FeS2). Iron pentacarbonyl Fe(CO)5, a liquid, was precursor for iron. Propylene sulfide, (PS) a liquid ( b. p. = 72–75 °C, v. p. ∼ 87 torr @ 20°C ) decomposes cleanly and quantitatively as S2 and C3H6 (propylene) above 250°C. Deposition of thin films of pyrite and their analysis by X-ray diffraction and Mossbauer and X-ray Photoelectron spectroscopy is described. Liquid state, long term stability, clean and low temperature generation of active S2 species in vapor phase and gaseous by product C3H6 which can be burned to CO2 and H2O are the key advantages offered by propylene sulfide as a sulfur source.

Plasma-Enhanced Metalorganic Chemical Vapor deposition of Lipon Thin Films

MRS Proceedings ◽

10.1557/opl.2011.702 ◽

2011 ◽

Vol 1313 ◽

Author(s):

Lamartine Meda

Keyword(s):

Thin Films ◽

Ionic Conductivity ◽

Vapor Deposition ◽

Electrochemical Impedance ◽

Chemical Vapor ◽

X Ray ◽

ABSTRACTLithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasmaenhanced metalorganic chemical vapor deposition (PE-MOCVD) method using triethyl phosphate [(CH2CH3)3PO4] and lithium tert-butoxide [(LiOC(CH3)3] precursors. Growth rates were between 100 and 415 Å/min, and thicknesses ranged from 1 to 2.5 μm. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy revealed approximately 6.9 at.% carbon in the films. The ionic conductivity of Lipon was measured using electrochemical impedance spectroscopy (EIS) and approximately 1.02 μS/cm was obtained, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets. An all-solid-state thin-film lithium microbattery such as Li/Lipon/LiCoO2/Au/substrate was successfully fabricated with Lipon deposited by PE-MOCVD. The battery has a capacity of ca. 22 μAh/cm2μm.

Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-361-355 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 6

Author(s):

D.L. Kaiser ◽

M.D. Vaudin ◽

L.D. Rotter ◽

Z.L. Wang ◽

J.P. Cline ◽

...

Keyword(s):

Thin Films ◽

Electron Diffraction ◽

Harmonic Generation ◽

Vapor Deposition ◽

Second Harmonic ◽

Chemical Vapor ◽

X Ray ◽

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

X-Ray Photoelectron Spectroscopy Studies of Titanium Nitride Barrier Metals Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l907 ◽

1995 ◽

Vol 34 (Part 2, No. 7B) ◽

pp. L907-L910 ◽

Cited By ~ 6

Author(s):

Y. H. Chang ◽

S. J. Won ◽

J.E.Oh ◽

S. H. Paek ◽

H.D.Lee ◽

...

Keyword(s):

Titanium Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

X Ray ◽

Spectroscopy Studies ◽

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-484-63 ◽

1997 ◽

Vol 484 ◽

Author(s):

K. Li ◽

K. L. Tan ◽

M. Pelczynski ◽

Z. C. Fenge ◽

A. T. S. Wee ◽

...

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Lattice Mismatch ◽

Chemical Vapor ◽

Interface Properties ◽

Surface And Interface ◽

AbstractThere is increasing interest in the epitaxial growth of high quality InSb thin films on GaAs substrates for many device applications such as infrared optoelectronics. The large lattice mismatch (14.6%) between InSb and GaAs has meant that both growth techniques and conditions have a large influence on the interface properties and consequently the film quality. A surface science study, by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) together with Nomarski microscopy, on the surface and interface properties of InSb/GaAs by metalorganic chemical vapor deposition is presented. It is found fromthe XPS data that the ambient surface is composed of InSb, In2O3, Sb2O3 and Sb2O5. The interdiffusion phenomena are studied by AES depth profiling; the width of interdiffusion region is determined to be 50±10 nm for all the samples grown at different V/III ratios. This is narrower than the data previously obtained for InSb/GaAs interfaces produced by metalorganic magnetron sputtering. The results also demonstrate that uniform and stoichiometric InSb films have been obtained, and that the reproducibility of the MOCVD technique is excellent.

X-ray photoelectron spectroscopy study of GaN and GaP surfaces annealed in PH3 and NH3 and metalorganic chemical vapor deposition growth of GaN / GaP heterostructures

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91051-0 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 203-208 ◽

Cited By ~ 4

Author(s):

Yoshihiro Ueta ◽

Hisao Sato ◽

Shiro Sakai ◽

Masuo Fukui

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Spectroscopy Study ◽

Chemical Vapor Deposition Growth ◽

X Ray ◽

Substrate Dependent Texture and Heteroepitaxy for Group IIIA Nitride Films by the X-Ray Precession Method

MRS Proceedings ◽

10.1557/proc-208-357 ◽

1990 ◽

Vol 208 ◽

Cited By ~ 2

Author(s):

T. J. Kistenmacher ◽

W. A. Bryden ◽

D. K. Wickenden ◽

S. A. Ecelberger

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

X Ray ◽

Fused Quartz ◽

ABSTRACTThe X-ray precession method has been utilized to study texture and heteroepitaxy for thin films of the Group IIIA nitrides deposited on a variety of amorphous and single-crystal substrates. Films of InN were synthesized by reactive rfmagnetron sputtering [employing an elemental target and N2 as the sputtering gas], while the GaN films were deposited by metalorganic chemical vapor deposition [utilizing (CH 3 ) 3Ga and NH3 as sources]. The quality of (00.1) textured films of InN on fused quartz and slightly off-axis (111) Si are taken as initial examples of the versatility of the X-ray precession method. The powder rings evolving from a lack of azimuthal coherence for InN films grown on quartz are contrasted with the scattering from weakly correlated (pseudo heteroepitaxial) domains for films grown on (111) Si. These latter scattering features are then compared with those from the true heteroepitaxial deposition of InN onto the (111) face of cubic ZrO2. And, finally, the scattering from the heteroepitaxial growth of InN and GaN on the (00.1) face of sapphire and some initial studies on the effect of nucleation layers on twinning in the GaN films are presented.

Synthesis and Characterization of Calcium Phosphate Coatings by Metalorganic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-550-361 ◽

1998 ◽

Vol 550 ◽

Cited By ~ 2

Author(s):

Y. Gao

Keyword(s):

Vapor Deposition ◽

Calcium Phosphates ◽

Chemical Vapor ◽

Calcium Pyrophosphate ◽

X Ray Diffraction ◽

X Ray ◽

AbstractThin coatings of various calcium phosphates including tricalcium phosphate (TCP), calcium pyrophosphate, and hydroxyapatite were synthesized by plasma-enhanced metalorganic chemical vapor deposition (MOCVD). Structure, composition, and surface morphology of the coatings were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. All coatings were very dense and free of cracks. X- ray diffraction showed that the as-grown coatings with the Ca/P ratio of 1.5±0.5 and 1.0±0.5 were crystalline μ- TCP and pyrophosphate, respectively. However, hydroxyapatite coatings with the Ca/P ratio of ∼1.67 were amorphous. The crystalline μ-TCP and pyrophosphate coatings exhibited strong growth texture. The textured orientations varied with different growth temperatures. In addition, the microstructure of the μ-TCP coatings strongly depended on the growth temperatures.