Synthesis and Characterization of Calcium Phosphate Coatings by Metalorganic Chemical Vapor Deposition

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Calcium Phosphates ◽

Chemical Vapor ◽

Calcium Pyrophosphate ◽

X Ray Diffraction ◽

X Ray ◽

AbstractThin coatings of various calcium phosphates including tricalcium phosphate (TCP), calcium pyrophosphate, and hydroxyapatite were synthesized by plasma-enhanced metalorganic chemical vapor deposition (MOCVD). Structure, composition, and surface morphology of the coatings were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. All coatings were very dense and free of cracks. X- ray diffraction showed that the as-grown coatings with the Ca/P ratio of 1.5±0.5 and 1.0±0.5 were crystalline μ- TCP and pyrophosphate, respectively. However, hydroxyapatite coatings with the Ca/P ratio of ∼1.67 were amorphous. The crystalline μ-TCP and pyrophosphate coatings exhibited strong growth texture. The textured orientations varied with different growth temperatures. In addition, the microstructure of the μ-TCP coatings strongly depended on the growth temperatures.

Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

MRS Proceedings ◽

10.1557/proc-406-133 ◽

1995 ◽

Vol 406 ◽

Author(s):

M. S. Gaffneyt ◽

C. M. Reavesl ◽

A. L Holmes ◽

R. S. Smith ◽

S. P. DenBaars

Keyword(s):

Real Time ◽

Vapor Deposition ◽

Chemical Vapor ◽

Normal Operation ◽

Growth Monitoring ◽

X Ray Diffraction ◽

X Ray ◽

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.364297 ◽

1997 ◽

Vol 81 (6) ◽

pp. 2607-2610 ◽

Cited By ~ 10

Author(s):

Takumi Nittono ◽

Fumiaki Hyuga

Keyword(s):

Diffraction Analysis ◽

Vapor Deposition ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.539-543.1230 ◽

2007 ◽

Vol 539-543 ◽

pp. 1230-1235 ◽

Cited By ~ 2

Author(s):

Hyoun Woo Kim ◽

S.H. Shim

Keyword(s):

Cross Sections ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Substrates ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi2Thin Film by X-ray Diffraction Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4943 ◽

2003 ◽

Vol 42 (Part 1, No. 8) ◽

pp. 4943-4948 ◽

Cited By ~ 14

Author(s):

Takeshi Kimura ◽

Kensuke Akiyama ◽

Takayuki Watanabe ◽

Keisuke Saito ◽

Hiroshi Funakubo

Keyword(s):

Crystal Structure ◽

Vapor Deposition ◽

Chemical Vapor ◽

Crystal Structure Analysis ◽

Diffraction Measurement ◽

X Ray Diffraction ◽

X Ray ◽

Monitoring of indium x-ray peak to optimize InxGa1-xN layer grown by metalorganic chemical vapor deposition

MRS Proceedings ◽

10.1557/proc-449-1005 ◽

1996 ◽

Vol 449 ◽

Author(s):

Hongqiang Lu ◽

Malathi Thothathiri ◽

Ziming Wu ◽

Ishwara Bhat

Keyword(s):

Vapor Deposition ◽

Quantitative Measure ◽

Chemical Vapor ◽

Droplet Formation ◽

X Ray Diffraction ◽

Growth Technique ◽

X Ray ◽

ABSTRACTIndium droplet formation during the epitaxial growth of InxGa1-xN films is a serious problem for achieving high quality films with high indium mole fraction. In this paper, we studied the formation of indium droplets on the InxGa1-xN films grown by metalorganic chemical vapor deposition (MOCVD) using single crystal x-ray diffraction. It is found that the indium (101) peak in the x-ray diffraction spectra can be utilized as a quantitative measure to determine the amounts of indium droplets on the film. It is shown by monitoring the indium diffraction peak that the density of indium droplets increases at lower growth temperature. To suppress these indium droplets, a modulation growth technique is used. Indium droplet formation in the modulation growth is investigated and it is revealed in our study that the indium droplets problem has been partially relieved by the modulation growth technique.

Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN

MRS Proceedings ◽

10.1557/proc-482-125 ◽

1997 ◽

Vol 482 ◽

Cited By ~ 7

Author(s):

E. L. Piner ◽

N. A. El-Masry ◽

S. X. Liu ◽

S. M. Bedair

Keyword(s):

Phase Separation ◽

Vapor Deposition ◽

Single Phase ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

AbstractInGaN films in the 0–50% InN composition range have been analyzed for the occurrence of phase separation. The ñ0.5 jum thick InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) in the 690 to 780°C temperature range and analyzed by θ−20 x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area diffraction (SAD). As-grown films with up to 21% InN were single phase. However, for films with 28% InN and higher, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN. An explanation of the data based on the GaN-InN pseudo-binary phase diagram is discussed.

X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2018 ◽

1997 ◽

Vol 36 (Part 1, No. 4A) ◽

pp. 2018-2021 ◽

Cited By ~ 1

Author(s):

Hisao Sato ◽

Yoshiki Naoi ◽

Shiro Sakai

Keyword(s):

Diffraction Analysis ◽

Sapphire Substrate ◽

Vapor Deposition ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

Plasma-Enhanced Metalorganic Chemical Vapor deposition of Lipon Thin Films

MRS Proceedings ◽

10.1557/opl.2011.702 ◽

2011 ◽

Vol 1313 ◽

Author(s):

Lamartine Meda

Keyword(s):

Thin Films ◽

Ionic Conductivity ◽

Vapor Deposition ◽

Photoelectron Spectroscopy ◽

Electrochemical Impedance ◽

Chemical Vapor ◽

X Ray ◽

ABSTRACTLithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasmaenhanced metalorganic chemical vapor deposition (PE-MOCVD) method using triethyl phosphate [(CH2CH3)3PO4] and lithium tert-butoxide [(LiOC(CH3)3] precursors. Growth rates were between 100 and 415 Å/min, and thicknesses ranged from 1 to 2.5 μm. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy revealed approximately 6.9 at.% carbon in the films. The ionic conductivity of Lipon was measured using electrochemical impedance spectroscopy (EIS) and approximately 1.02 μS/cm was obtained, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets. An all-solid-state thin-film lithium microbattery such as Li/Lipon/LiCoO2/Au/substrate was successfully fabricated with Lipon deposited by PE-MOCVD. The battery has a capacity of ca. 22 μAh/cm2μm.

Structural, optical and electrical properties of GaN films grown by metalorganic chemical vapor deposition on sapphire.

MRS Proceedings ◽

10.1557/proc-680-e3.8 ◽

2001 ◽

Vol 680 ◽

Cited By ~ 1

Author(s):

P. Visconti ◽

M. A. Reshchikov ◽

F. Yun ◽

K. M. Jones ◽

H. Morkoç ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Etch Pits ◽

Plan View ◽

X Ray ◽

Defect Sites ◽

ABSTRACTProperties of GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on c-plane of sapphire have been investigated using atomic force microscopy (AFM), wet etching for defect investigation, transmission electron microscopy (TEM), high-resolution X-ray diffraction, Hall effect measurements and low-temperature photoluminescence (PL). Tapping-mode AFM images of the as-grown samples showed atomically smooth surfaces (rms roughness ≍ 0.2 nm) consisting of terraces separated by about 3Å bi-layer steps. Hot H3PO4 chemical etching was used to produce hexagonal-shaped etch pits at the surface defect sites as revealed by AFM imaging. The obtained etch pit densities (9×108 - 2 ×109 cm−2) were in agreement with the dislocation density found by plan-view and cross-sectional TEM observations. The full-width at half-maximum (FWHM) of the X-ray diffraction rocking curve was about 4.8 and 3.9 arcmin for the symmetric (002) and asymmetric (104) directions, respectively. PL spectrum at 15 K demonstrated sharp peaks (FWHM ≍ 4 meV) in the excitonic region, which were attributed to free and bound excitons. The spectrum contained also weak PL bands with maxima at about 2.2, 2.9 and 3.27 eV, which have been attributed to three different acceptors.

Growth of InSb/GaAs Layers on YIG-Coated GGG Substrate

MRS Proceedings ◽

10.1557/proc-281-381 ◽

1992 ◽

Vol 281 ◽

Author(s):

C. Jelen ◽

S. Charrière ◽

M. Razeghi ◽

V. J. Leppert

Keyword(s):

Laser Ablation ◽

Liquid Phase ◽

Vapor Deposition ◽

Lattice Mismatch ◽

Chemical Vapor ◽

X Ray Diffraction ◽

X Ray ◽

ABSTRACTWe report the first growth of InSb and GaAs epilayers upon a garnet (YIG = Y3Fe5O12) epilayer. The YIG was deposited using liquid phase epitaxy on a garnet (GGG = Gd3Ga5O12) substrate oriented in the [111] direction. The growth of the GaAs was carried out using laser ablation and no superlattice was used to buffer the lattice mismatch between YIG and GaAs. The growth of InSb was done by low-pressure metalorganic chemical vapor deposition. From x-ray diffraction analysis it was found that the GaAs and InSb were both (110) monocrystalline epitaxial layers.