High Quality GaAs Epitaxial Layers Grown from Ga–As–Bi Solutions by Liquid Phase Epitaxy

1997 ◽  
Vol 36 (Part 1, No. 6A) ◽  
pp. 3385-3388 ◽  
Author(s):  
S. Saravanan ◽  
K. Jeganathan ◽  
K. Baskar ◽  
J. Kumar ◽  
C. Subramanian ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality

High quality AlGaSb, AlGaAsSb and InGaAsSb epitaxial layers grown by liquid-phase epitaxy from Sb-rich melts

1997 ◽  
Vol 144 (6) ◽  
pp. 438-440 ◽  
Author(s):  
A.G. Deryagin ◽  
V.M. Smirnov ◽  
V.I. Vasil'ev ◽  
G.S. Sokolovskii ◽  
N.N. Faleev
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality

Epitaxial Layers Si: (Sn,Yb) Produced by the Crystallization From the Melt-Solution on the Basis of Sn.

1993 ◽  
Vol 298 ◽  
Author(s):  
D.I. Brinkevich ◽  
N.M. Kazuchits ◽  
V.V. Petrov
Keyword(s):  
Liquid Phase ◽  
Optical Microscopy ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality ◽  
Low Concentration ◽  
Crystallization From The Melt

AbstractEpitaxial layers (EL) Si:Sn doped with Yb in the process of liquid phase epitaxy were studied by optical microscopy and photoluminescence (PL) methods.At low concentration of lanthanoid (0,01 < Nyb > 0,1 weight %) the good planarity of the interface and high quality of the surface are detected. At NYb > 0,1 weight % microirregularities are presented.In EL Si:(Sn, Yb) irradiated by 4,5 MeV-electrons the suppression of the generation of radiaton defects, responsible for G– and C-lines of PL, has been found. This effect has been explainedwithin the score of the model takeng into the consideration gettering propering ofYb in reference to the impurities of 0 and C as deformation fields, attributed to the presence of Sn atoms.

Epitaxial Layers Si:(Sn,Yb) Produced by The Crystallization From The Melt-Solution On The Basis Of Sn.

1993 ◽  
Vol 301 ◽  
Author(s):  
D.I. Brinkevich ◽  
N.M. Kazuchits ◽  
V.V. Petrov
Keyword(s):  
Liquid Phase ◽  
Optical Microscopy ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality ◽  
Low Concentration ◽  
Crystallization From The Melt

ABSTRACTEpitaxial layers (EL) Si:Sn doped with Yb in the process of liquid phase epitaxy were studied by optical microscopy and photoluminescence (PL) methods.At low concentration of lanthanoid (0,01 < Nyb < 0,1 weight %) the good planarity of the interface and high quality of the surface are detected. At NYb > 0,1 weight % microirregularities are presented.In EL Si:(Sn, Yb) irradiated by 4,5 MeV-electrons the suppression of the generation of radiaton defects, responsible for G- and C-lines of PL, has been found. This effect has been explainedwithin the score of the model takeng into the consideration gettering propering ofYb in reference to the impurities of 0 and 0 as deformation fields, attributed to the presence of Sn atoms.

Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy

1992 ◽  
Vol 35 (4) ◽  
pp. 523-528 ◽  
Author(s):  
Meng-Chyi Wu ◽  
Chi-Ching Chen ◽  
Ching-Ting Lee
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Evaluation of Composition Reproducibility of HgCdTe Epitaxial Layers Grown in Novel Liquid Phase Epitaxy Apparatus

2011 ◽  
Vol 50 (5S2) ◽  
pp. 05FB16
Author(s):  
Emil Huseynov ◽  
Shikhamir Eminov ◽  
Alovsat Rajabli ◽  
Tarlan Ibragimov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers

(Invited) Fabrication of High-Quality Ge-on-Insulator Structures by Lateral Liquid Phase Epitaxy

2015 ◽  
Vol 69 (5) ◽  
pp. 305-311 ◽  
Author(s):  
T. Shimura ◽  
Y. Suzuki ◽  
M. Matsue ◽  
K. Kajimura ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Influence of substrate conductivity type on the thickness and composition of epitaxial layers grown by Liquid Phase Epitaxy

2011 ◽  
Vol 520 (2) ◽  
pp. 700-702 ◽  
Author(s):  
E. Momox-Beristain ◽  
J. Martínez-Juárez ◽  
F. de Anda ◽  
V.H. Compeán-Jasso ◽  
V.A. Mishurnyi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
Conductivity Type ◽  
Influence Of Substrate
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