Epitaxial Layers Si: (Sn,Yb) Produced by the Crystallization From the Melt-Solution on the Basis of Sn.

1993 ◽  
Vol 298 ◽  
Author(s):  
D.I. Brinkevich ◽  
N.M. Kazuchits ◽  
V.V. Petrov
Keyword(s):  
Liquid Phase ◽  
Optical Microscopy ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality ◽  
Low Concentration ◽  
Crystallization From The Melt

AbstractEpitaxial layers (EL) Si:Sn doped with Yb in the process of liquid phase epitaxy were studied by optical microscopy and photoluminescence (PL) methods.At low concentration of lanthanoid (0,01 < Nyb > 0,1 weight %) the good planarity of the interface and high quality of the surface are detected. At NYb > 0,1 weight % microirregularities are presented.In EL Si:(Sn, Yb) irradiated by 4,5 MeV-electrons the suppression of the generation of radiaton defects, responsible for G– and C-lines of PL, has been found. This effect has been explainedwithin the score of the model takeng into the consideration gettering propering ofYb in reference to the impurities of 0 and C as deformation fields, attributed to the presence of Sn atoms.

Epitaxial Layers Si:(Sn,Yb) Produced by The Crystallization From The Melt-Solution On The Basis Of Sn.

1993 ◽  
Vol 301 ◽  
Author(s):  
D.I. Brinkevich ◽  
N.M. Kazuchits ◽  
V.V. Petrov
Keyword(s):  
Liquid Phase ◽  
Optical Microscopy ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality ◽  
Low Concentration ◽  
Crystallization From The Melt

ABSTRACTEpitaxial layers (EL) Si:Sn doped with Yb in the process of liquid phase epitaxy were studied by optical microscopy and photoluminescence (PL) methods.At low concentration of lanthanoid (0,01 < Nyb < 0,1 weight %) the good planarity of the interface and high quality of the surface are detected. At NYb > 0,1 weight % microirregularities are presented.In EL Si:(Sn, Yb) irradiated by 4,5 MeV-electrons the suppression of the generation of radiaton defects, responsible for G- and C-lines of PL, has been found. This effect has been explainedwithin the score of the model takeng into the consideration gettering propering ofYb in reference to the impurities of 0 and 0 as deformation fields, attributed to the presence of Sn atoms.

High quality AlGaSb, AlGaAsSb and InGaAsSb epitaxial layers grown by liquid-phase epitaxy from Sb-rich melts

1997 ◽  
Vol 144 (6) ◽  
pp. 438-440 ◽  
Author(s):  
A.G. Deryagin ◽  
V.M. Smirnov ◽  
V.I. Vasil'ev ◽  
G.S. Sokolovskii ◽  
N.N. Faleev
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality

High Quality GaAs Epitaxial Layers Grown from Ga–As–Bi Solutions by Liquid Phase Epitaxy

1997 ◽  
Vol 36 (Part 1, No. 6A) ◽  
pp. 3385-3388 ◽  
Author(s):  
S. Saravanan ◽  
K. Jeganathan ◽  
K. Baskar ◽  
J. Kumar ◽  
C. Subramanian ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality

High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

2010 ◽  
Vol 159 ◽  
pp. 87-90
Author(s):  
M. Milanova ◽  
Roumen Kakanakov ◽  
G. Koleva ◽  
P. Vitanov ◽  
V. Bakardjieva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Al Content ◽  
Quaternary Compounds ◽  
Transmission Electron

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

Growth and characterization of high-quality GaInAsSb layers on GaSb substrates by liquid-phase epitaxy

1992 ◽  
Vol 35 (4) ◽  
pp. 523-528 ◽  
Author(s):  
Meng-Chyi Wu ◽  
Chi-Ching Chen ◽  
Ching-Ting Lee
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Quality

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

Evaluation of Composition Reproducibility of HgCdTe Epitaxial Layers Grown in Novel Liquid Phase Epitaxy Apparatus

2011 ◽  
Vol 50 (5S2) ◽  
pp. 05FB16
Author(s):  
Emil Huseynov ◽  
Shikhamir Eminov ◽  
Alovsat Rajabli ◽  
Tarlan Ibragimov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers
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