Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers

1997 ◽  
Vol 36 (Part 1, No. 12A) ◽  
pp. 7095-7099 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxide Precipitate

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

Impurity Engineering of Czochralski Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 261-267 ◽  
Author(s):  
Jia He Chen ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Integrated Circuits ◽  
Mechanical Strength ◽  
Large Scale ◽  
Silicon Wafers ◽  
The Novel ◽  
High Concentration ◽  
Czochralski Silicon ◽  
Void Defects ◽  
Silicon Materials ◽  
Novel Concept

The novel concept of “impurity engineering in CZochralski (CZ) silicon ” for large scaled integrated circuits has been reviewed. By doping with a certain impurities into CZ silicon materials intentionally, such as nitrogen (N), germanium (Ge) and even carbon (C, with high concentration), internal gettering ability of CZ silicon wafers could be improved. Meanwhile, void defects in CZ silicon wafer could be easily eliminated during annealing at higher temperatures. Furthermore, it was also found that the mechanical strength could be increased, so that breakage of wafers decreased. Thus, it is believed that by impurity engineering CZ silicon wafers can satisfy the requirment of ultra large scale integrated circuits.

Investigation of the Mechanical Strength of Hydrogen‐Annealed Czochralski Silicon Wafers

1999 ◽  
Vol 146 (1) ◽  
pp. 364-366 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon

Influence of germanium doping on the mechanical strength of Czochralski silicon wafers

2008 ◽  
Vol 103 (12) ◽  
pp. 123521 ◽  
Author(s):  
Jiahe Chen ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Zhidan Zeng ◽  
Daxi Tian ◽  
...  
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon

Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

2016 ◽  
Vol 99 ◽  
pp. 231-235 ◽  
Author(s):  
D. Kot ◽  
G. Kissinger ◽  
M.A. Schubert ◽  
M. Klingsporn ◽  
A. Huber ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitates

Gettering of surface and bulk impurities in Czochralski silicon wafers

1978 ◽  
Vol 32 (11) ◽  
pp. 747-749 ◽  
Author(s):  
G. A. Rozgonyi ◽  
C. W. Pearce
Keyword(s):  
Silicon Wafers ◽  
Czochralski Silicon
Sign in / Sign up

Export Citation Format

Share Document