Electrical Characterization of Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Tetrakis(diethylamino)silane and Ozone

1997 ◽  
Vol 36 (Part 2, No. 7B) ◽  
pp. L922-L925 ◽  
Author(s):  
Toshiro Maruyama
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Electrical Characterization ◽  
Chemical Vapor

FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

2000 ◽  
Vol 17 (12) ◽  
pp. 912-914 ◽  
Author(s):  
Wang Peng-Fei ◽  
Ding Shi-Jin ◽  
Zhang Wei ◽  
Zhang Jian-Yun ◽  
Wang Ji-Tao ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ftir Characterization ◽  
Doped Silicon

Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Thermal Behavior ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicon Compounds ◽  
Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

Preparation and characterization of single crystalline anatase TiO2 films on LSAT (001) by MOCVD

RSC Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 4867-4871 ◽  
Author(s):  
Mingxian Wang ◽  
Weiguang Wang ◽  
Zhao Li ◽  
Xuejian Du ◽  
Xianjin Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Anatase Tio2 ◽  
Tio2 Films ◽  
Anatase Structure ◽  
Metalorganic Chemical

TiO2 thin films with anatase structure have been prepared on [LaAlO3]0.3[SrAl0.5Ta0.5O3]0.7 (LSAT) (001) substrates by metalorganic chemical vapor deposition (MOCVD) in the substrate temperature range of 500–650 °C.

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