Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1764-1767 ◽  
Author(s):  
Shui Hsiang Su ◽  
Meiso Yokoyama ◽  
Yan Kuin Su
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching ◽  
Zns Films

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen

1992 ◽  
Vol 60 (24) ◽  
pp. 3025-3026 ◽  
Author(s):  
K. Ohtsuka ◽  
M. Imaizumi ◽  
H. Sugimoto ◽  
T. Isu ◽  
Y. Endoh
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching

Fabrication of GaN mesa structures

1996 ◽  
Vol 1 ◽  
Author(s):  
K.V. Vassilevski ◽  
M.G. Rastegaeva ◽  
A.I. Babanin ◽  
I.P. Nikitina ◽  
V.A. Dmitriev
Keyword(s):  
Ohmic Contacts ◽  
Reactive Ion Etching ◽  
Contact Resistivity ◽  
Gas Mixture ◽  
Ion Etching ◽  
Etch Rates ◽  
Ar Gas

We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2×10−5  Ω×cm2 and Ni ohmic contacts for p-doped GaN with Rc ~ 4×10−2 Ω×cm2 were formed. Both types of contacts were used as masks for GaN reactive ion etching (RIE) in a CCl2F2/Ar gas mixture. Maximum etch rates of ~ 40 nm/min were obtained. Mesa structures up to 3 μm in height were formed.

Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma

2015 ◽  
Vol 30 (6) ◽  
pp. 065014 ◽  
Author(s):  
J Abautret ◽  
A Evirgen ◽  
J P Perez ◽  
Y Laaroussi ◽  
A Cordat ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching ◽  
Inductively Coupled
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