Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

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Reactive ion etching of a‐SiC:H films using CCl4 and O2 gas mixture

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578727 ◽

1993 ◽

Vol 11 (2) ◽

pp. 286-290 ◽

Cited By ~ 3

Author(s):

T. C. Lo ◽

H. C. Huang

Keyword(s):

Reactive Ion Etching ◽

Gas Mixture ◽

Ion Etching

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Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1764 ◽

1998 ◽

Vol 37 (Part 1, No. 4A) ◽

pp. 1764-1767 ◽

Cited By ~ 3

Author(s):

Shui Hsiang Su ◽

Meiso Yokoyama ◽

Yan Kuin Su

Keyword(s):

Reactive Ion Etching ◽

Gas Mixture ◽

Ion Etching ◽

Zns Films

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Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.909.91 ◽

2014 ◽

Vol 909 ◽

pp. 91-94

Author(s):

Jun Gou ◽

Hui Ling Tai ◽

Jun Wang ◽

De En Gu ◽

Xiong Bang Wei ◽

...

Keyword(s):

Thin Film ◽

Taguchi Method ◽

Vanadium Oxide ◽

Etch Rate ◽

Reactive Ion Etching ◽

Oxide Thin Film ◽

Optimum Process ◽

Rf Power ◽

Ion Etching ◽

Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

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Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589552 ◽

1997 ◽

Vol 15 (4) ◽

pp. 993 ◽

Cited By ~ 3

Author(s):

Bo Asp Mo̸ller Andersen

Keyword(s):

Spatial Variation ◽

Etch Rate ◽

Reactive Ion Etching ◽

Ion Etching ◽

Deep Etching

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The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

MRS Proceedings ◽

10.1557/proc-1108-a09-34 ◽

2008 ◽

Vol 1108 ◽

Cited By ~ 2

Author(s):

Xiaoyan Xu ◽

Vladimir Kuryatkov ◽

Boris Borisov ◽

Mahesh Pandikunta ◽

Sergey A Nikishin ◽

...

Keyword(s):

Surface Roughness ◽

Plasma Etching ◽

Inductively Coupled Plasma ◽

Etch Rate ◽

Reactive Ion Etching ◽

Native Oxide ◽

Short Exposure ◽

Ion Etching ◽

Inductively Coupled ◽

High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

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