Fabrication of GaN mesa structures

1996 ◽  
Vol 1 ◽  
Author(s):  
K.V. Vassilevski ◽  
M.G. Rastegaeva ◽  
A.I. Babanin ◽  
I.P. Nikitina ◽  
V.A. Dmitriev
Keyword(s):  
Ohmic Contacts ◽  
Reactive Ion Etching ◽  
Contact Resistivity ◽  
Gas Mixture ◽  
Ion Etching ◽  
Etch Rates ◽  
Ar Gas

We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2×10−5  Ω×cm2 and Ni ohmic contacts for p-doped GaN with Rc ~ 4×10−2 Ω×cm2 were formed. Both types of contacts were used as masks for GaN reactive ion etching (RIE) in a CCl2F2/Ar gas mixture. Maximum etch rates of ~ 40 nm/min were obtained. Mesa structures up to 3 μm in height were formed.

Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture

Vacuum ◽  
2015 ◽  
Vol 119 ◽  
pp. 151-158 ◽  
Author(s):  
Adrian Adalberto Garay ◽  
Su Min Hwang ◽  
Ji Hyun Choi ◽  
Byoung Chul Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Magnetic Thin Films ◽  
Gas Mixture ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Gas

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1764-1767 ◽  
Author(s):  
Shui Hsiang Su ◽  
Meiso Yokoyama ◽  
Yan Kuin Su
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching ◽  
Zns Films

Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen

1992 ◽  
Vol 60 (24) ◽  
pp. 3025-3026 ◽  
Author(s):  
K. Ohtsuka ◽  
M. Imaizumi ◽  
H. Sugimoto ◽  
T. Isu ◽  
Y. Endoh
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixture ◽  
Ion Etching

Inductively Coupled Plasma Reactive Ion Etching of GeSbTe Thin Films in a HBr/Ar Gas

2007 ◽  
Vol 90 (1) ◽  
pp. 95-106 ◽  
Author(s):  
JANG WOO LEE ◽  
HAN NA CHO ◽  
SU RYUN MIN ◽  
CHEE WON CHUNG
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Gas

Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Dilip P. Vijay ◽  
Seshu B. Desu ◽  
Wei Pan
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Pressure ◽  
Limiting Factor ◽  
Rf Power ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Etch Rates

AbstractIn this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

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