Electrical Properties of Al/CaF2/i-Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Fabricated by Ultrahigh Vacuum Process

1998 ◽  
Vol 37 (Part 2, No. 11A) ◽  
pp. L1293-L1296 ◽  
Author(s):  
Young Yun ◽  
Tetsuro Maki ◽  
Hiroyuki Tanaka ◽  
Yusuke Shirakawa ◽  
Takeshi Kobayashi
2005 ◽  
Vol 891 ◽  
Author(s):  
Takeyasu Saito ◽  
Kyung-ho Park ◽  
Kazuyuki Hirama ◽  
Hitoshi Umezawa ◽  
Mitsuya Satoh ◽  
...  

ABSTRACTAn H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, Idmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.


2001 ◽  
Vol 16 (12) ◽  
pp. 997-1001 ◽  
Author(s):  
Kun-Wei Lin ◽  
Chin-Chuan Cheng ◽  
Shiou-Ying Cheng ◽  
Kuo-Hui Yu ◽  
Chih-Kai Wang ◽  
...  

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