Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics
2000 ◽
Vol 360
(1-2)
◽
pp. 256-260
◽
A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor
2001 ◽
Vol 16
(12)
◽
pp. 997-1001
◽
Keyword(s):
1998 ◽
Vol 37
(Part 2, No. 11A)
◽
pp. L1293-L1296
◽
2009 ◽
Vol 117
(1369)
◽
pp. 1032-1034
◽