Slurry Chemical Corrosion and Galvanic Corrosion during Copper Chemical Mechanical Polishing

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6216-6222 ◽  
Author(s):  
Seiichi Kondo ◽  
Noriyuki Sakuma ◽  
Yoshio Homma ◽  
Naofumi Ohashi
Keyword(s):  
Chemical Mechanical Polishing ◽  
Galvanic Corrosion ◽  
Mechanical Polishing ◽  
Chemical Corrosion

An Effect Contrast for Chemical Mechanical Polishing with Mechanical Polishing for Tungsten Steel

2009 ◽  
Vol 69-70 ◽  
pp. 98-102
Author(s):  
Ke Hua Zhang ◽  
Dong Hui Wen
Keyword(s):  
Residual Stress ◽  
Chemical Mechanical Polishing ◽  
Steel Surface ◽  
Removal Rate ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Chemical Corrosion ◽  
High Dissolution Rate ◽  
Polishing Fluid ◽  
Tungsten Steel

The interaction between the tungsten steel surface and the polishing fluid & abrasive were discussed by AFM, SEM and XRD test in order to compare the chemical performances and mechanical action of the tungsten steel polishing in the paper. The chemical mechanical polishing (CMP) and the mechanical polishing (MP) was employed, respectively. The experiments results indicated that the CMP with a higher the materials removal ratio than by MP. Because a chemical corrosion effect implies that slurries with the highest removal rate have high dissolution rate, and have a lower the residual stress, however the surface took on wrinkling.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

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