Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2663-2668 ◽  
Author(s):  
Soo Geun Lee ◽  
Yun Jun Kim ◽  
Seung Pae Lee ◽  
Hyeok-Sang Oh ◽  
Seung Jae Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Low Dielectric Constant ◽  
Dual Damascene ◽  
Low Dielectric ◽  
Damascene Process ◽  
Diffusion Barrier Layer ◽  
Cu Diffusion Barrier

Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process

2000 ◽  
Author(s):  
Soo Gun Lee ◽  
Hyeok-Sang Oh ◽  
Hong-Jae Shin ◽  
Jin-Gi Hong ◽  
Hyeon-Deok Lee ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Dual Damascene ◽  
Damascene Process ◽  
Diffusion Barrier Layer ◽  
Cu Diffusion Barrier

Integration of Low Dielectric Constant Materials in Advanced Aluminum and Copper Interconnects

1999 ◽  
Vol 565 ◽  
Author(s):  
Bin Zhao ◽  
Maureen Brongo
Keyword(s):  
Dielectric Constant ◽  
Low Cost ◽  
Copper Interconnects ◽  
Low Dielectric Constant ◽  
Manufacturing Cost ◽  
Cu Metallization ◽  
Dual Damascene ◽  
Low Dielectric ◽  
On Chip ◽  
Interconnect Systems

AbstractAdvanced on-chip interconnects using new materials and new integration architectures are necessary for current and future IC chips in order to meet the requirements in performance, reliability and manufacturing cost. Insulating materials with low dielectric constant (low-κ) and conductive materials with low-resistivity have drawn significant attention for their possible applications in IC interconnects. Dual damascene interconnect integration architectures not only offer process simplification and low cost, but also enable the use of low-resistive Cu for interconnect wiring. Use of low-κ materials in dual damascene architecture is challenging due to material and processing issues. In this paper, the evolution of advanced interconnects, materials and technology options, and some recent achievements in advanced interconnect systems of low-κ dielectric and dual damascene architectures for both Al and Cu metallization are reviewed and discussed.

Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects

1996 ◽  
Vol 427 ◽  
Author(s):  
R. Tacito ◽  
C. Steinbrüchel
Keyword(s):  
Dielectric Constant ◽  
Aspect Ratio ◽  
Silicon Dioxide ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Low Dielectric Constant ◽  
Ion Etching ◽  
Fine Line ◽  
Dual Damascene ◽  
Low Dielectric

AbstractParylene-n (pa-n) and benzocyclobutene (BCB) are novel candidate materials for interlevel dielectrics in future multilevel interconnects, due to their dielectric constant being much lower than that of silicon dioxide. We describe the fine line patterning of these materials by reactive ion etching in O2/CF4 plasmas. Examples of high aspect ratio trenches and dual damascene structures are presented involving processes with single and double hardmasks.

Integration of Low Dielectric Constant Materials in Advanced Aluminum and Copper Interconnects

1999 ◽  
Vol 564 ◽  
Author(s):  
Bin Zhao ◽  
Maureen Brongo
Keyword(s):  
Dielectric Constant ◽  
Low Cost ◽  
Copper Interconnects ◽  
Low Dielectric Constant ◽  
Manufacturing Cost ◽  
Cu Metallization ◽  
Dual Damascene ◽  
Low Dielectric ◽  
On Chip ◽  
Interconnect Systems

AbstractAdvanced on-chip interconnects using new materials and new integration architectures are necessary for current and future IC chips in order to meet the requirements in performance, reliability and manufacturing cost. Insulating materials with low dielectric constant (low-κ) and conductive materials with low-resistivity have drawn significant attention for their possible applications in IC interconnects. Dual damascene interconnect integration architectures not only offer process simplification and low cost, but also enable the use of low-resistive Cu for interconnect wiring. Use of low-κ materials in dual damascene architecture is challenging due to material and processing issues. In this paper, the evolution of advanced interconnects, materials and technology options, and some recent achievements in advanced interconnect systems of low-κ dielectric and dual damascene architectures for both Al and Cu metallization are reviewed and discussed.

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