A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

2004 ◽  
Vol 460 (1-2) ◽  
pp. 211-216 ◽  
Author(s):  
Y.H. Wang ◽  
M.R. Moitreyee ◽  
R. Kumar ◽  
L. Shen ◽  
K.Y. Zeng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Comparative Study ◽  
Barrier Layer ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Etch Stop ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Ultra Low-dielectric-constant Materials for 65nm Technology Node and Beyond

2004 ◽  
Vol 812 ◽  
Author(s):  
Hao Cui ◽  
Darren Moore ◽  
Richard Carter ◽  
Masaichi Eda ◽  
Peter Burke ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Plasma Damage ◽  
Pore Characteristics ◽  
Hydrogenated Silicon ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Etch Stop ◽  
Low Dielectric Constant Materials

AbstractPore characteristics including pore size distribution, porosity, and pore interconnectivity of PECVD SiCOH inter- layer dielectric (ILD) materials with different dielectric constant (κ) values have been studied. Oxygen plasma damage to SiCOH low-κ films increases dramatically as the κ value decreases. Simulations showed that, compared to the ILD film, the overhead dielectric films have a significant impact on the overall effective κ (κeff) of the BEOL interconnects. Reducing the κ values of these overhead films helps to alleviate the pressure on the κ value requirement of the ILD materials while still meeting the κeff target. Ultra low-κ (ULK) PECVD hydrogenated silicon carbide (H:SiC) films with a κ of 3.0 have been studied for the etch-stop applications. Studies of the chemical composition and bonding structure suggest that less Si-C networκs are formed and more micro-porosity are incorporated in the ULK H:SiC film. The leakage current of the ULK H:SiC film is found to be about 5 times lower than the H:S iC and H:SiCN films with higher κ values. The etch rate of ULK H:SiC film using a standard SiCOH ILD etch chemistry has been found to be negligible. Such an extremely high etch selectivity maκes these films very good etch-stop layers.

Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2663-2668 ◽  
Author(s):  
Soo Geun Lee ◽  
Yun Jun Kim ◽  
Seung Pae Lee ◽  
Hyeok-Sang Oh ◽  
Seung Jae Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Low Dielectric Constant ◽  
Dual Damascene ◽  
Low Dielectric ◽  
Damascene Process ◽  
Diffusion Barrier Layer ◽  
Cu Diffusion Barrier

Comparative Study of Pore Size of Low-Dielectric-Constant Porous Spin-on-Glass Films Using Different Methods of Nondestructive Instrumentation

2001 ◽  
Vol 40 (Part 2, No. 4A) ◽  
pp. L323-L326 ◽  
Author(s):  
Eiichi Kondoh ◽  
Mikhail R. Baklanov ◽  
Eric Lin ◽  
David Gidley ◽  
Akira Nakashima
Keyword(s):  
Dielectric Constant ◽  
Comparative Study ◽  
Pore Size ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Glass Films

Dry Etching of Organic Low Dielectric Constant Film without Etch Stop Layer

2002 ◽  
Vol 41 (Part 2, No. 4A) ◽  
pp. L425-L427 ◽  
Author(s):  
Michinobu Mizumura ◽  
Ryouji Fukuyama ◽  
Yutaka Oomoto
Keyword(s):  
Dielectric Constant ◽  
Dry Etching ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Etch Stop ◽  
Etch Stop Layer

Comparative study of low dielectric constant material deposited using different precursors

2011 ◽  
Vol 29 (4) ◽  
pp. 041507 ◽  
Author(s):  
Bor-Jou Wei ◽  
Yi-Lung Cheng ◽  
Fu-Hsing Lu ◽  
Tai-Jung Chiu ◽  
Han-Chang Shih
Keyword(s):  
Dielectric Constant ◽  
Comparative Study ◽  
Low Dielectric Constant ◽  
Low Dielectric
Sign in / Sign up

Export Citation Format

Share Document