Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects

1996 ◽  
Vol 427 ◽  
Author(s):  
R. Tacito ◽  
C. Steinbrüchel
Keyword(s):  
Dielectric Constant ◽  
Aspect Ratio ◽  
Silicon Dioxide ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Low Dielectric Constant ◽  
Ion Etching ◽  
Fine Line ◽  
Dual Damascene ◽  
Low Dielectric

AbstractParylene-n (pa-n) and benzocyclobutene (BCB) are novel candidate materials for interlevel dielectrics in future multilevel interconnects, due to their dielectric constant being much lower than that of silicon dioxide. We describe the fine line patterning of these materials by reactive ion etching in O2/CF4 plasmas. Examples of high aspect ratio trenches and dual damascene structures are presented involving processes with single and double hardmasks.

Impact of plasma reactive ion etching on low dielectric constant porous organosilicate films' microstructure and chemical composition

2016 ◽  
Vol 228 ◽  
pp. 297-304 ◽  
Author(s):  
Matthieu Lépinay ◽  
Daniel Lee ◽  
Riccardo Scarazzini ◽  
Michel Bardet ◽  
Marc Veillerot ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Composition ◽  
Reactive Ion Etching ◽  
Low Dielectric Constant ◽  
Ion Etching ◽  
Low Dielectric

Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio

2014 ◽  
Vol 113 ◽  
pp. 35-39 ◽  
Author(s):  
Jayalakshmi Parasuraman ◽  
Anand Summanwar ◽  
Frédéric Marty ◽  
Philippe Basset ◽  
Dan E. Angelescu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching

Sharp High-Aspect-Ratio AFM Tips Fabricated by a Combination of Deep Reactive Ion Etching and Focused Ion Beam Techniques

2010 ◽  
Vol 10 (1) ◽  
pp. 497-501 ◽  
Author(s):  
David Caballero ◽  
Guillermo Villanueva ◽  
Jose Antonio Plaza ◽  
Christopher A. Mills ◽  
Josep Samitier ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Afm Tips

Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2663-2668 ◽  
Author(s):  
Soo Geun Lee ◽  
Yun Jun Kim ◽  
Seung Pae Lee ◽  
Hyeok-Sang Oh ◽  
Seung Jae Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Low Dielectric Constant ◽  
Dual Damascene ◽  
Low Dielectric ◽  
Damascene Process ◽  
Diffusion Barrier Layer ◽  
Cu Diffusion Barrier

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO2 and Sputter Deposited AlN Dielectric Stack

2008 ◽  
Vol 600-603 ◽  
pp. 987-990 ◽  
Author(s):  
A. Kumta ◽  
E. Rusli ◽  
J.H. Xia
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Silicon Dioxide ◽  
Breakdown Voltage ◽  
Field Enhancement ◽  
Low Dielectric Constant ◽  
Field Plate ◽  
Low Dielectric ◽  
High K ◽  
Sputter Deposited

Silicon dioxide (SiO2), one of the commonly used dielectrics for field plate terminated 4H-SiC devices suffers from high electric field and premature breakdown due to its low dielectric constant (k). This problem can be addressed by using high-k dielectrics such as AlN that will reduce the field and improve the breakdown voltage (VB). Sputter deposited amorphous AlN films with a thickness (tAl) ranging from 0.05 μm to 1.3 μm have been deposited on 4H-SiC n-type samples with a 10 μm thick epilayer doped with nitrogen to a concentration of 1.7–3.5×1015/cm3 . The VB of the diodes was found to improve to as much as 1500 V at tAl = 0.8 μm, which is more than 2 times the VB of unterminated structures which have a premature breakdown between 600-700 V due to field enhancement at the diode periphery.

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