INSULATOR PHYSICS AND ENGINEERING : ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY APPLICATIONS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1115-C4-1121
Author(s):  
D. J. DiMaria
2013 ◽  
Vol 14 (3) ◽  
pp. 699-702 ◽  
Author(s):  
Sungjune Jung ◽  
Antony Sou ◽  
Enrico Gili ◽  
Henning Sirringhaus

Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.


Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1700
Author(s):  
Anca Mihaela Vasile (Dragan) ◽  
Alina Negut ◽  
Adrian Tache ◽  
Gheorghe Brezeanu

An EEPROM (electrically erasable programmable read-only memory) reprogrammable fuse for trimming a digital temperature sensor is designed in a 0.18-µm CMOS EEPROM. The fuse uses EEPROM memory cells, which allow multiple programming cycles by modifying the stored data on the digital trim codes applied to the thermal sensor. By reprogramming the fuse, the temperature sensor can be adjusted with an increased trim variation in order to achieve higher accuracy. Experimental results for the trimmed digital sensor showed a +1.5/−1.0 ℃ inaccuracy in the temperature range of −20 to 125 ℃ for 25 trimmed DTS samples at 1.8 V by one-point calibration. Furthermore, an average mean of 0.40 ℃ and a standard deviation of 0.70 ℃ temperature error were obtained in the same temperature range for power supply voltages from 1.7 to 1.9 V. Thus, the digital sensor exhibits similar performances for the entire power supply range of 1.7 to 3.6 V.


Author(s):  
Arshid Nisar ◽  
Seema Dhull ◽  
Sparsh Mittal ◽  
Brajesh Kumar Kaushik

Author(s):  
Shujing Jia ◽  
Huanglong Li ◽  
Qi Liu ◽  
Zhitang Song ◽  
Min Zhu
Keyword(s):  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Takuya Ohzono ◽  
Kaoru Katoh ◽  
Hiroyuki Minamikawa ◽  
Mohand O. Saed ◽  
Eugene M. Terentjev

AbstractNematic liquid crystal elastomers (N-LCE) exhibit intriguing mechanical properties, such as reversible actuation and soft elasticity, which manifests as a wide plateau of low nearly-constant stress upon stretching. N-LCE also have a characteristically slow stress relaxation, which sometimes prevents their shape recovery. To understand how the inherent nematic order retards and arrests the equilibration, here we examine hysteretic stress-strain characteristics in a series of specifically designed main-chain N-LCE, investigating both macroscopic mechanical properties and the microscopic nematic director distribution under applied strains. The hysteretic features are attributed to the dynamics of thermodynamically unfavoured hairpins, the sharp folds on anisotropic polymer strands, the creation and transition of which are restricted by the nematic order. These findings provide a new avenue for tuning the hysteretic nature of N-LCE at both macro- and microscopic levels via different designs of polymer networks, toward materials with highly nonlinear mechanical properties and shape-memory applications.


2021 ◽  
Vol 15 (3) ◽  
pp. 2170015
Author(s):  
Minh Anh Luong ◽  
Marta Agati ◽  
Nicolas Ratel Ramond ◽  
Jérémie Grisolia ◽  
Yannick Le Friec ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.


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