Fabrication of Perovskite Manganite (La,Sr)MnO3Thin Films by Chemical Solution Deposition and Their Low-Field Magnetoresistance Properties at Room Temperature

2001 ◽  
Vol 40 (Part 1, No. 12) ◽  
pp. 6821-6824 ◽  
Author(s):  
Kiyotaka Tanaka ◽  
Soichiro Okamura ◽  
Tadashi Shiosaki
Polymers ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 1598 ◽  
Author(s):  
Jin Xu ◽  
Justin Varghese ◽  
Giuseppe Portale ◽  
Alessandro Longo ◽  
Jamo Momand ◽  
...  

Over the past decades, the development of nano-scale electronic devices and high-density memory storage media has raised the demand for low-cost fabrication methods of two-dimensional (2D) arrays of magnetic nanostructures. Here, we present a chemical solution deposition methodology to produce 2D arrays of cobalt ferrite (CFO) nanodots on Si substrates. Using thin films of four different self-assembled block copolymers as templates, ordered arrays of nanodots with four different characteristic dimensions were fabricated. The dot sizes and their long-range arrangement were studied with scanning electron microscopy (SEM) and grazing incident small-angle X-ray scattering (GISAXS). The structural evolution during UV/ozone treatment and the following thermal annealing was investigated through monitoring the atomic arrangement with X-ray absorption fine structure spectroscopy (EXAFS) and checking the morphology at each preparation step. The preparation method presented here obtains array types that exhibit thicknesses less than 10 nm and blocking temperatures above room temperature (e.g., 312 K for 20 nm diameter dots). Control over the average dot size allows observing an increase of the blocking temperature with increasing dot diameter. The nanodots present promising properties for room temperature data storage, especially if a better control over their size distribution will be achieved in the future.


2012 ◽  
Vol 135 (1) ◽  
pp. 38-41 ◽  
Author(s):  
Jingjing Qiu ◽  
Yung-Chien Wu ◽  
Yi-Chung Wang ◽  
Mark H. Engelhard ◽  
Lisa McElwee-White ◽  
...  

2014 ◽  
Vol 70 (a1) ◽  
pp. C725-C725
Author(s):  
Josef Bursik ◽  
Radomir Kuzel ◽  
Karel Knizek ◽  
Ivo Drbohlav

Hexagonal ferrites (M, Y, Z-type) represent a new diverse class of magnetoelectric (ME) multiferroics, where ME effect is driven by complex magnetic order. Integration of ME materials with standard semiconductor technology is important for ultimate realization of ME functionalities. They have the potential to display ME coupling under low magnetic field bias and at temperatures close to room temperature. Methods based on sol–gel transition offer possibility of low cost and efficient way for the evaluation of new material system. The single phase, epitaxial thin films of Y-type hexagonal ferrite has been prepared and studied. Thin films of Ba2Zn2Fe12O22(Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(111)(ST) single crystal substrates using epitaxial SrFe12O19(M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into high density of well-oriented isolated grains with expressive shape anisotropy and hexagonal habit.The vital parameters of the seed layer, i.e. thickness, substrate coverage,crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. By overcoating this seed layer, Y phase prepared under optimum deposition and heat treatment conditions presents a (001) orientation perpendicular to the substrate. Perfect parallel in-plane alignment of the hexagonal cells of SrTiO3substrate and both hexaferrite phases was proved by fast ω and φ scan measurements on sets of several diffraction planes at asymmetric orientations, and also by pole figures. The soft magnetic character and existence of pronounced magnetic anisotropy in Y films were confirmed by room temperature measurements of magnetization.


2015 ◽  
Vol 3 (3) ◽  
pp. 582-595 ◽  
Author(s):  
Qi Zhang ◽  
Nagarajan Valanoor ◽  
Owen Standard

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.


2019 ◽  
Vol 478 ◽  
pp. 408-411 ◽  
Author(s):  
Yanqiu Liu ◽  
Renhuai Wei ◽  
Wei Ding ◽  
Xin Wang ◽  
Wenhai Song ◽  
...  

2003 ◽  
Vol 77 (2) ◽  
pp. 598-602 ◽  
Author(s):  
F.M Pontes ◽  
E Longo ◽  
E.R Leite ◽  
E.J.H Lee ◽  
J.A Varela ◽  
...  

2013 ◽  
Vol 566 ◽  
pp. 159-162
Author(s):  
Yuya Ito ◽  
Makoto Moriya ◽  
Wataru Sakamoto ◽  
Toshinobu Yogo

Ferroelectric 0.7BiFeO3-0.3BaTiO3 and 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films were prepared by the chemical solution deposition. Perovskite single-phase thin films with homogeneous surface morphology were successfully fabricated at 700°C on Pt/TiOx/SiO2/Si substrates. Although typical polarization (P)-electric field (E) hysteresis loops were observed for 0.7BiFeO3-0.3BaTiO3 thin films, their insulation resistance was relatively low at room temperature. Mn doping for Fe site of the 0.7BiFeO3-0.3BaTiO3 was very effective in improving leakage current properties. In 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films, the abrupt increase in leakage current was suppressed even at high electric fields, leading to the well-shaped P-E hysteresis loops at ambient temperatures. Remanent polarization and coercive field of the 0.7Bi (Fe0.95Mn0.05)O3-0.3Bi0.5Na0.5TiO3 films at room temperature were approximately 26 μC/cm2 and 130 kV/cm, respectively.


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