High Reliability of 0.1 µm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP Substrates

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1099-1103 ◽  
Author(s):  
Yeong-Chang Chou ◽  
Denise Leung ◽  
Richard Lai ◽  
Ron Grundbacher ◽  
John Scarpulla ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Electron Mobility ◽  
High Reliability ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Inp Substrates

High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates

2000 ◽  
Vol 39 (Part 2, No. 8B) ◽  
pp. L838-L840 ◽  
Author(s):  
Yoshimi Yamashita ◽  
Akira Endoh ◽  
Masataka Higashiwaki ◽  
Kohki Hikosaka ◽  
Takashi Mimura ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Inp Substrates ◽  
Lattice Matched

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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