Measurement of Strain Distribution in InGaAsP Selective-Area Growth Layers Using a Micro-Area X-Ray Diffraction Method with Sub-µm Spatial Resolution

2002 ◽  
Vol 41 (Part 2, No. 9A/B) ◽  
pp. L1013-L1015 ◽  
Author(s):  
Shigeru Kimura ◽  
Yasushi Kagoshima ◽  
Kenji Kobayashi ◽  
Koichi Izumi ◽  
Yasutaka Sakata ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Strain Distribution ◽  
Diffraction Method ◽  
Selective Area Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selective Area ◽  
Area Growth ◽  
Area X

X-ray microdiffraction studies of InGaAsP selective-area growth layers

2018 ◽  
pp. 229-232
Author(s):  
S Kimura ◽  
K Izumi ◽  
Y Tsusaka ◽  
Y Kagoshima ◽  
J Matsui
Keyword(s):  
Selective Area Growth ◽  
X Ray ◽  
Selective Area ◽  
Area Growth

scholarly journals Structural Dynamics of GaN Microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray Microdiffraction

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
V. Kachkanov ◽  
B. Leung ◽  
J. Song ◽  
Y. Zhang ◽  
M.-C. Tsai ◽  
...  
Keyword(s):  
Structural Dynamics ◽  
Selective Area Growth ◽  
X Ray ◽  
Evolutionary Selection ◽  
Selective Area ◽  
Area Growth

Selective Area Growth of Magnetic Garnet Crystals by Liquid-Phase Epitaxy

1999 ◽  
Vol 587 ◽  
Author(s):  
H. Yokoi ◽  
T. Mizumoto
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Energy ◽  
Selective Area Growth ◽  
X Ray ◽  
Selective Area ◽  
Light Waves ◽  
Area Growth ◽  
One Step ◽  
Magnetic Garnet

AbstractSelective area growth of magnetic garnet crystals was studied by liquid-phase epitaxy. The garnet layers grown on Ti-masked substrates were analyzed under a scanning electron microscope, and by X-ray diffraction measurements, energy-dispersive X-ray analysis and reflection high-energy electron diffraction. Narrow stripes in the Ti mask were designed to form waveguides by one-step growth. The light waves could be guided within the waveguide fabricated by selective area liquid-phase epitaxy.

Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth

2003 ◽  
Vol 253 (1-4) ◽  
pp. 38-45 ◽  
Author(s):  
A.A. Sirenko ◽  
C.L. Reynolds ◽  
L.J. Peticolas ◽  
A. Ougazzaden ◽  
A. Kazimirov ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
X Ray ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

Sign in / Sign up

Export Citation Format

Share Document