Ohmic Contact top-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

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Tantalum–ruthenium dioxide as a diffusion barrier between Pt bottom electrode and TiSi2 ohmic contact layer for high density capacitors

Journal of Applied Physics ◽

10.1063/1.371090 ◽

1999 ◽

Vol 86 (5) ◽

pp. 2544-2549 ◽

Cited By ~ 13

Author(s):

Dong-Soo Yoon ◽

Hong Koo Baik ◽

Sung-Man Lee ◽

Sang-In Lee

Keyword(s):

Ohmic Contact ◽

Diffusion Barrier ◽

Bottom Electrode ◽

Contact Layer ◽

High Density ◽

Ruthenium Dioxide

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Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome

MRS Proceedings ◽

10.1557/proc-423-119 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 10

Author(s):

E. D. Luckowski ◽

J. R. Williams ◽

M. J. Bozack ◽

T. Isaacs-Smith ◽

J. Crofton

Keyword(s):

Barrier Layer ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Contact Layer ◽

Weight Percent ◽

Nickel Silicide ◽

Electrical Characteristics ◽

Success Rates ◽

Diffusion Barrier Layer

AbstractResults are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). In comparison to contacts formed on 6H-SiC using pure Ni, the electrical characteristics of these NiCr contacts are similar (∼ 1E-5 Ω-cm2 for moderately doped material), and composite Au/NiCr contacts exhibit good stability during long-term anneals (∼ 2500 hr) at 300 C without the requirement of a diffusion barrier layer between the ohmic contact layer and the Au cap layer. The use of NiCr also results in success rates near 100% for direct wire bonding to the Au cap layers.

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Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers

Journal of Electronic Materials ◽

10.1007/s11664-001-0072-5 ◽

2001 ◽

Vol 30 (7) ◽

pp. 861-865 ◽

Cited By ~ 4

Author(s):

Ching-Tingh Lee ◽

Hsiao-Wei Kao ◽

Fu-Tasi Hwang

Keyword(s):

Thermal Stability ◽

Ohmic Contact ◽

Thermal Stability Of

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Zirconium Mediated Hydrogen Outdiffusion from p-GaN

MRS Proceedings ◽

10.1557/proc-595-f99w10.9 ◽

1999 ◽

Vol 595 ◽

Author(s):

E. Kaminska ◽

A. Piotrowska ◽

A. Barcz ◽

J. Jasinski ◽

M. Zielinski ◽

...

Keyword(s):

Thermal Stability ◽

Thermal Behavior ◽

Ohmic Contact ◽

Contact System ◽

P Type ◽

Thermal Stability Of

AbstractWe have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

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