Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact

2017 ◽  
Vol 56 (14) ◽  
pp. 4197 ◽  
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Contact Layer ◽  
Residual Carbon ◽  
Carbon Impurities ◽  
Mg Doped

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

2014 ◽  
Vol 115 (16) ◽  
pp. 163704 ◽  
Author(s):  
J. Yang ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
Z. S. Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Compensation Effect ◽  
Residual Carbon ◽  
Carbon Impurities ◽  
Mg Doped

Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome

1996 ◽  
Vol 423 ◽  
Author(s):  
E. D. Luckowski ◽  
J. R. Williams ◽  
M. J. Bozack ◽  
T. Isaacs-Smith ◽  
J. Crofton
Keyword(s):  
Barrier Layer ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact Layer ◽  
Weight Percent ◽  
Nickel Silicide ◽  
Electrical Characteristics ◽  
Success Rates ◽  
Diffusion Barrier Layer

AbstractResults are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). In comparison to contacts formed on 6H-SiC using pure Ni, the electrical characteristics of these NiCr contacts are similar (∼ 1E-5 Ω-cm2 for moderately doped material), and composite Au/NiCr contacts exhibit good stability during long-term anneals (∼ 2500 hr) at 300 C without the requirement of a diffusion barrier layer between the ohmic contact layer and the Au cap layer. The use of NiCr also results in success rates near 100% for direct wire bonding to the Au cap layers.

Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer

2004 ◽  
Vol 43 (4B) ◽  
pp. 1934-1936 ◽  
Author(s):  
Hsin-Chuan Wang ◽  
Yan-Kuin Su ◽  
Chun-Liang Lin ◽  
Wen-Ben Chen ◽  
Shi-Ming Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ohmic Contact ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Contact Layer ◽  
Multiple Quantum ◽  
Light Emitting

Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices

2001 ◽  
Vol 45 (5) ◽  
pp. 717-720 ◽  
Author(s):  
C.H Kuo ◽  
J.K Sheu ◽  
G.C Chi ◽  
Y.L Huang ◽  
T.W Yeh
Keyword(s):  
Ohmic Contact ◽  
Low Resistance ◽  
Mg Doped

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

2015 ◽  
Vol 24 (11) ◽  
pp. 116803 ◽  
Author(s):  
Xiao-Jing Li ◽  
De-Gang Zhao ◽  
De-Sheng Jiang ◽  
Ping Chen ◽  
Jian-Jun Zhu ◽  
...  
Keyword(s):  
Contact Layer ◽  
Contact Resistivity ◽  
Mg Doped

Ohmic Contact top-GaN Using a Strained InGaN Contact Layer and Its Thermal Stability

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2254-2256 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Contact Layer
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