Tantalum–ruthenium dioxide as a diffusion barrier between Pt bottom electrode and TiSi2 ohmic contact layer for high density capacitors

1999 ◽  
Vol 86 (5) ◽  
pp. 2544-2549 ◽  
Author(s):  
Dong-Soo Yoon ◽  
Hong Koo Baik ◽  
Sung-Man Lee ◽  
Sang-In Lee
Keyword(s):  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Bottom Electrode ◽  
Contact Layer ◽  
High Density ◽  
Ruthenium Dioxide

Design of Side Bottom-Electrode-Contact for High Density Phase-Change Memory Array

2012 ◽  
Vol 12 (10) ◽  
pp. 7939-7943
Author(s):  
Yan Liu ◽  
Zhitang Song ◽  
Bo Liu ◽  
Jia Xu ◽  
Houpeng Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Bottom Electrode ◽  
Phase Change Memory ◽  
High Density ◽  
Memory Array ◽  
Electrode Contact ◽  
Change Memory

Effect of Pt diffusion barrier layer in Ni/AuGe/Pt/Au on ohmic contact to n-GaAs

2015 ◽  
Vol 36 (3) ◽  
pp. 036002 ◽  
Author(s):  
Yong Wang ◽  
Dandan Liu ◽  
Guoqing Feng ◽  
Zhen Ye ◽  
Zhanqi Gao ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Diffusion Barrier Layer

Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome

1996 ◽  
Vol 423 ◽  
Author(s):  
E. D. Luckowski ◽  
J. R. Williams ◽  
M. J. Bozack ◽  
T. Isaacs-Smith ◽  
J. Crofton
Keyword(s):  
Barrier Layer ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact Layer ◽  
Weight Percent ◽  
Nickel Silicide ◽  
Electrical Characteristics ◽  
Success Rates ◽  
Diffusion Barrier Layer

AbstractResults are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). In comparison to contacts formed on 6H-SiC using pure Ni, the electrical characteristics of these NiCr contacts are similar (∼ 1E-5 Ω-cm2 for moderately doped material), and composite Au/NiCr contacts exhibit good stability during long-term anneals (∼ 2500 hr) at 300 C without the requirement of a diffusion barrier layer between the ohmic contact layer and the Au cap layer. The use of NiCr also results in success rates near 100% for direct wire bonding to the Au cap layers.

Improved Light Outcoupling from OLED by Non-Wave-Guiding Anode Designs

2014 ◽  
Vol 1627 ◽  
Author(s):  
M. Slawinski ◽  
M. Brast ◽  
X. D. Zhang ◽  
F. Merget ◽  
J. Witzens ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Light Emitting Diode ◽  
Contact Layer ◽  
Electromagnetic Simulation ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Au Film ◽  
Bottom Contact ◽  
Organic Light ◽  
Guided Modes

ABSTRACTWe improve the efficiency of a bottom-emitting red phosphorescent organic light emitting diode (OLED) by the suppression of wave-guided modes in the bottom contact. ITO as bottom contact layer has been substituted by a thin Ti/Au layer. Electromagnetic simulation results of both devices predict the absence of TE polarized guided contact modes by the use of 10 nm Au as bottom electrode. We measured an improved outcoupling of light which overcompensates absorption losses of the Ti/Au layer in the measured emission cone. By the use of 1 nm Ti as undercoat, a continuous Au film of 8 nm thickness could be realized with an improved transmittance for long wavelengths (λ > 550 nm). As a consequence of fewer lateral guided modes, the external quantum efficiency (EQE) has been enhanced from 11.5 % of the standard device to 14 % of the device with the Ti/Au electrode.

Dual Role of Tin Reaction Barrier in Gold-Based Metallization to GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kaminska ◽  
M. Guziewicz ◽  
S. Kwiatkowski ◽  
A. Turos
Keyword(s):  
Magnetron Sputtering ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Tin Films ◽  
Specific Contact ◽  
Tin Diffusion Barrier

ABSTRACTThe formation of ohmic contacts to p-GaAs based on Au-Zn system comprising a TiN diffusion barrier has been investigated using 2 MeV He+ RBS and the specific contact resistance measurements. It has been proved that TiN films deposited by reactive RF bias magnetron sputtering serves two purposes. First it suppresses the arsenic evaporation and thus confines the reaction between AuZn and GaAs. Second, it prevents intermixing between p-GaAs/Au(Zn) ohmic contact and an overlayer of Au.

TaN BOTTOM ELECTRODE THERMAL SENSING RESISTOR FOR MEMs-BASED BOLOMETER APPLICATION

2013 ◽  
Vol 22 (10) ◽  
pp. 1340021 ◽  
Author(s):  
XIAOXU KANG ◽  
JIAQING LI ◽  
CHAO YUAN ◽  
SHOUMIAN CHEN ◽  
YUHANG ZHAO
Keyword(s):  
Low Power ◽  
Ohmic Contact ◽  
Bottom Electrode ◽  
Surface Residue ◽  
Transfer Condition ◽  
Time Control ◽  
Sensing Material ◽  
Thermal Sensing ◽  
Good Contact

In this work, TaN bottom electrode thermal sensing resistor for MEMs-based bolometer was designed and fabricated by 200 mm Cu -BEOL compatible process. Thermal sensing material was B -doped alpha- Si deposited by PECVD in situ doping process. PVD TaN film was used as the bottom electrode. Dedicated process on modified tool was introduced to achieve a good contact between the TaN and the sensing material. There are both CVD and Etch chambers installed on this modified tool. Wafer with bottom electrode pattern was pre-cleaned firstly by low-power Ar /CF4 gas to remove oxide and possible surface residue on TaN in the etch chamber. Then, the wafer was transferred to CVD chamber through transfer chamber in vacuum condition. With vacuum transfer condition under tight Q-time control, Ohmic contact can be achieved for the TaN bottom electrode and B -doped alpha- Si . Through the IV curve and TCR data, it can be seen that the bottom electrode device can well meet the MEMs-based bolometer requirements.

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