The Influence of Matrix on Quantum Size Confinement of Semiconductor Microcrystals Doped in Glass Thin Films Prepared by RF-Sputtering

2003 ◽  
Vol 42 (Part 1, No. 1) ◽  
pp. 270-273 ◽  
Author(s):  
Hiroyuki Nasu ◽  
Hiroshi Iwatani ◽  
Takafumi Iwano ◽  
Tadanori Hashimoto ◽  
Kanichi Kamiya
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Quantum Size ◽  
Size Confinement

Quantum Size Effect of Semiconductor Microcrystallites Doped in SiO2-Glass Thin Films Prepared by Rf-Sputtering

1989 ◽  
Vol 28 (Part 1, No. 10) ◽  
pp. 1928-1933 ◽  
Author(s):  
Keiji Tsunetomo ◽  
Hiroyuki Nasu ◽  
Haruyuki Kitayama ◽  
Akira Kawabuchi ◽  
Yukio Osaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Size Effect ◽  
Rf Sputtering ◽  
Quantum Size Effect ◽  
Sio2 Glass ◽  
Quantum Size

Quantum size effect of ZnSe microcrystal-doped SiO2 glass thin films prepared by RF-sputtering method

1997 ◽  
Vol 12 (10) ◽  
pp. 2552-2558 ◽  
Author(s):  
Masayuki Hayashi ◽  
Takafumi Iwano ◽  
Hiroyuki Nasu ◽  
Kanichi Kamiya ◽  
Naoki Sugimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Blue Shift ◽  
Rf Magnetron Sputtering ◽  
Coulomb Force ◽  
Input Power ◽  
Surface Area Ratio ◽  
Quantum Size ◽  
The Matrix ◽  
Positive Holes

Semiconductor ZnSe microcrystal-doped SiO2 glass thin films were prepared by the RF-magnetron sputtering method. The particle size of ZnSe microcrystals in the films depended on sputtering conditions such as input power, substrate temperature, and relative surface area ratio (ZnSe/SiO2) in the target. The blue shift of the optical absorption edge was observed in these glass films. This blue shift energy was explained in terms of the independent confinement of electrons and positive holes, Coulomb force and the influence of a collapsed exciton and the dielectric constant of the matrix glass being taken into consideration.

Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

2019 ◽  
Vol 7 (17) ◽  
pp. 10696-10701 ◽  
Author(s):  
Fábio G. Figueiras ◽  
J. Ramiro A. Fernandes ◽  
J. P. B. Silva ◽  
Denis O. Alikin ◽  
Eugénia C. Queirós ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Optical Gap ◽  
Ferroelectric Oxide

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.

scholarly journals High quality ITO thin films grown by dc and RF sputtering without oxygen

2010 ◽  
Vol 43 (5) ◽  
pp. 055402 ◽  
Author(s):  
Ocal Tuna ◽  
Yusuf Selamet ◽  
Gulnur Aygun ◽  
Lutfi Ozyuzer
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
High Quality ◽  
Ito Thin Films

Characteristics of CIGS thin films prepared by RF sputtering employing CIGS single target

2011 ◽  
Author(s):  
Tae-Won Kim ◽  
Young-Baek Kim ◽  
Sang-In Song ◽  
Chae-Whan Jung ◽  
Jong-Ho Lee
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Single Target

Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering

1998 ◽  
Vol 50 (1-4) ◽  
pp. 13-18 ◽  
Author(s):  
Tooru Tanaka ◽  
Nobutaka Tanahashi ◽  
Toshiyuki Yamaguchi ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Rf Sputtering

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Structural characterization of V2O5–TiO2 thin films deposited by RF sputtering from a titanium target with vanadium insets

2005 ◽  
Vol 109 (1) ◽  
pp. 47-51 ◽  
Author(s):  
I. Alessandri ◽  
E. Comini ◽  
E. Bontempi ◽  
G. Sberveglieri ◽  
L.E. Depero
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Rf Sputtering ◽  
Tio2 Thin Films ◽  
Titanium Target

Lead Iodide Thin Films via rf Sputtering

2020 ◽  
Vol 20 (3) ◽  
pp. 1531-1537 ◽  
Author(s):  
José Maria Clemente da Silva Filho ◽  
Nelson Fabián Villegas Borrero ◽  
Gustavo Alexandre Viana ◽  
Rafael Borges Merlo ◽  
Francisco Chagas Marques
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Lead Iodide
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