Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3 µm InGaAsN Vertical Cavity Surface Emitting Lasers

2004 ◽  
Vol 43 (4A) ◽  
pp. 1260-1263 ◽  
Author(s):  
Tetsuya Takeuchi ◽  
Ying-Lan Chang ◽  
Michael Leary ◽  
Dan Mars ◽  
Yoon Kyu Song ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Metalorganic Chemical
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