Organometallic Chemical Vapor Deposition Growth of Heterostructure of Wide Band Gap and Transparent Boron Phosphide on Silicon

2005 ◽  
Vol 44 (1B) ◽  
pp. 681-683 ◽  
Author(s):  
Michiya Odawara ◽  
Takashi Udagawa ◽  
Goro Shimaoka
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Chemical Vapor Deposition Growth ◽  
Boron Phosphide ◽  
Organometallic Chemical Vapor Deposition

Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
M.J. Williams ◽  
S.M. Cho ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Active Material ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

We have investigated a-Si,N:H alloys as an alternative wide band-gap, photo-active material. The entire alloy range between a-Si:H and a-Si3N4:H can be formed by a remote plasma-enhanced chemical-vapor deposition (PECVD) process. Other studies have demonstrated that a-Si,N:H alloys could be doped to form window materials for p-i-n devices. This paper focuses on alloy materials with E04 bandgaps to about 2.2 eV. We have prepared these a-Si,N:H alloys, characterized their microstructure, and studied their photoconductivity, sensitivity to light-soaking and transport properties. For example, with increased alloying we show that i) the white-light photoconductivity and ii) the kinetics and magnitude of the decay of photoconducitivity under intense illumination (the Staebler-Wronski effect), are about the same as for PV-grade a-Si:H.

Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

2014 ◽  
Vol 386 ◽  
pp. 190-193 ◽  
Author(s):  
Takayoshi Oshima ◽  
Mifuyu Niwa ◽  
Akira Mukai ◽  
Tomohito Nagami ◽  
Toshihisa Suyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap

Wide band gap and conducting tungsten carbide (WC) thin films prepared by hot wire chemical vapor deposition (HW-CVD) method

2016 ◽  
Vol 183 ◽  
pp. 315-317 ◽  
Author(s):  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhavar ◽  
Rupali Kulkarni ◽  
Vaishali Waman ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Hot Wire ◽  
Wide Band Gap ◽  
Cvd Method

Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology

2014 ◽  
Vol 563 ◽  
pp. 50-55 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Sergio Battiato ◽  
Giuseppe Greco ◽  
Patrick Fiorenza ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Organic Chemical ◽  
Wide Band Gap ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Device Technology

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

ACS Nano ◽  
2017 ◽  
Vol 11 (4) ◽  
pp. 4328-4336 ◽  
Author(s):  
Zhepeng Zhang ◽  
Xujing Ji ◽  
Jianping Shi ◽  
Xiebo Zhou ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Van Der Waals Heterostructures ◽  
Chemical Vapor Deposition Growth

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

2016 ◽  
Vol 108 (20) ◽  
pp. 202103 ◽  
Author(s):  
Xiaochuan Xia ◽  
Yuanpeng Chen ◽  
Qiuju Feng ◽  
Hongwei Liang ◽  
Pengcheng Tao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hexagonal Phase ◽  
Chemical Vapor ◽  
Wide Band ◽  
Organic Chemical ◽  
Wide Band Gap ◽  
Phase Pure ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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