Plasma-chemical vapor deposition of wide band gap a-SiC:H films: An ab initio molecular-orbital study

2000 ◽  
Vol 87 (8) ◽  
pp. 4031-4035 ◽  
Author(s):  
Shih-Hung Cheng ◽  
Kota Sato ◽  
Yukinobu Kumashiro
Keyword(s):  
Chemical Vapor Deposition ◽  
Ab Initio ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Plasma Chemical ◽  
Wide Band Gap ◽  
Plasma Chemical Vapor Deposition ◽  
Molecular Orbital Study

Hydrogenated Amorphous Silicon-Nitrogen, a-Si,N:H ALLOYS: An Alternative to A-SI,C:H for the Wide Band Gap Photo-Active Material in Tandem PV Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
M.J. Williams ◽  
S.M. Cho ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Active Material ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

We have investigated a-Si,N:H alloys as an alternative wide band-gap, photo-active material. The entire alloy range between a-Si:H and a-Si3N4:H can be formed by a remote plasma-enhanced chemical-vapor deposition (PECVD) process. Other studies have demonstrated that a-Si,N:H alloys could be doped to form window materials for p-i-n devices. This paper focuses on alloy materials with E04 bandgaps to about 2.2 eV. We have prepared these a-Si,N:H alloys, characterized their microstructure, and studied their photoconductivity, sensitivity to light-soaking and transport properties. For example, with increased alloying we show that i) the white-light photoconductivity and ii) the kinetics and magnitude of the decay of photoconducitivity under intense illumination (the Staebler-Wronski effect), are about the same as for PV-grade a-Si:H.

Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

2014 ◽  
Vol 386 ◽  
pp. 190-193 ◽  
Author(s):  
Takayoshi Oshima ◽  
Mifuyu Niwa ◽  
Akira Mukai ◽  
Tomohito Nagami ◽  
Toshihisa Suyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Wide Band Gap

Wide band gap and conducting tungsten carbide (WC) thin films prepared by hot wire chemical vapor deposition (HW-CVD) method

2016 ◽  
Vol 183 ◽  
pp. 315-317 ◽  
Author(s):  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhavar ◽  
Rupali Kulkarni ◽  
Vaishali Waman ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Band ◽  
Hot Wire ◽  
Wide Band Gap ◽  
Cvd Method

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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