Carrier Mobility in Metal-Oxide-Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si-Nitride Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l903 ◽

2005 ◽

Vol 44 (No. 28) ◽

pp. L903-L905 ◽

Author(s):

Anri Nakajima ◽

Hiroyuki Ishii ◽

Shin Yokoyama

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.1520 ◽

2006 ◽

Vol 45 (3A) ◽

pp. 1520-1524

Author(s):

Yao-Jen Lee ◽

Pei-Tsang Ho ◽

Wen-Luh Yang ◽

Tien-Sheng Chao ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Applied Physics Letters ◽

10.1063/1.3684803 ◽

2012 ◽

Vol 100 (6) ◽

pp. 062905 ◽

Author(s):

C. Mahata ◽

S. Mallik ◽

T. Das ◽

C. K. Maiti ◽

G. K. Dalapati ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Effect Transistor

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GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1590743 ◽

2003 ◽

Vol 83 (1) ◽

pp. 180-182 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

S. N. G. Chu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.3462303 ◽

2010 ◽

Vol 97 (1) ◽

pp. 012106 ◽

Author(s):

J. J. Gu ◽

Y. Q. Liu ◽

M. Xu ◽

G. K. Celler ◽

R. G. Gordon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Thermally Grown

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Characterization of Hf1-xZrxO2Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.011101 ◽

2012 ◽

Vol 51 (1R) ◽

pp. 011101

Author(s):

Chen-Kuo Chiang ◽

Chien-Hung Wu ◽

Chin-Chien Liu ◽

Jin-Fu Lin ◽

Chien-Lun Yang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

Applied Physics Letters ◽

10.1063/1.3614446 ◽

2011 ◽

Vol 99 (3) ◽

pp. 033502 ◽

Author(s):

J. H. Yum ◽

T. Akyol ◽

M. Lei ◽

D. A. Ferrer ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2969282 ◽

2008 ◽

Vol 93 (5) ◽

pp. 053504 ◽

Author(s):

Y. C. Chang ◽

W. H. Chang ◽

H. C. Chiu ◽

L. T. Tung ◽

C. H. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

Applied Physics Letters ◽

10.1063/1.3050466 ◽

2008 ◽

Vol 93 (24) ◽

pp. 242106 ◽

Author(s):

Y. Q. Wu ◽

M. Xu ◽

P. D. Ye ◽

Z. Cheng ◽

J. Li ◽

...

Keyword(s):

Aspect Ratio ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Substrate ◽

Effect Transistor

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Atomic-Layer-Deposition HfO2-Based InP n-Channel Metal-Oxide-Semiconductor Field Effect Transistor Using Different Thicknesses of Al2O3 as Interfacial Passivation Layer

ECS Transactions ◽

10.1149/1.3481638 ◽

2019 ◽

Vol 33 (3) ◽

pp. 487-493 ◽

Author(s):

Yanzhen Wang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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