Stress Technology Impact on Device Performances and Reliability for Sub-90 nm Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect-Transistors

2006 ◽  
Vol 45 (4B) ◽  
pp. 3053-3057 ◽  
Author(s):  
Chieh-Ming Lai ◽  
Yean-Kuen Fang ◽  
Wen-Kuan Yeh
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor

Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator

2009 ◽  
Vol 48 (9) ◽  
pp. 091201
Author(s):  
Jong Pil Kim ◽  
Jae Young Song ◽  
Sang Wan Kim ◽  
Jae Hyun Park ◽  
Woo Young Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor

scholarly journals Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

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