Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
2009 ◽
Vol 48
(4)
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pp. 04C051
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2001 ◽
pp. 1343-1350
2017 ◽
Vol 32
(7)
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pp. 075001
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1995 ◽
Vol 34
(Part 2, No. 8A)
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pp. L978-L980
2015 ◽
Vol 87
(19)
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pp. 9982-9990
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2002 ◽
Vol 20
(3)
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pp. 1030-1033
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2002 ◽
Vol 419
(1-2)
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pp. 218-224
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