Novel Method of Converting Metallic-Type Carbon Nanotubes to Semiconducting-Type Carbon Nanotube Field-Effect Transistors

2006 ◽  
Vol 45 (4B) ◽  
pp. 3680-3685 ◽  
Author(s):  
Bae-Horng Chen ◽  
Jeng-Hua Wei ◽  
Po-Yuan Lo ◽  
Zing-Way Pei ◽  
Tien-Sheng Chao ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Novel Method

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

Fabrication of Carbon Nanotube Field-Effect Transistors with Metal and Semiconductor Electrodes

2007 ◽  
Vol 1057 ◽  
Author(s):  
Himani Sharma ◽  
Zhigang Xiao
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Bismuth Telluride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Back Side ◽  
Single Walled Carbon ◽  
Lift Off ◽  
Walled Carbon Nanotubes

ABSTRACTCarbon nanotube field-effect transistors (CNTFETs) were fabricated with metal material (gold) and semiconductor material (bismuth telluride) as the source and drain materials. Highly-purified HiPCO-grown single-walled carbon nanotubes (CNTs) from Carbon Nanotechnologies, Inc. (CNI) were used for the fabrication of CNTFETs. The single-walled carbon nanotubes were ultrasonically dispersed in toluene and dimethylformamide (DMF) with trifluoroacetic acid (TFA), as co-solvent. Dielectrophoresis (DEP) method was used to deposit, align, and assemble carbon nanotubes (CNTs) to bridge the gap between the source and drain of CNTFETs to form the channel. The structure of CNTFET is similar to a conventional field-effect transistor with substrate acting as a back-side gate. Electron-beam evaporation was used to deposit gold and bismuth telluride thin films. Microfabrication techniques such as photolithography, e-beam lithography, and lift-off process were used to define and fabricate the source, drain, and gate of CNTFETs. The gap between the source and drain varied from 800 nm to 3 µm. The drain-source current (IDS) of the fabricated CNTFETs versus the drain-source voltage (VDS) and the gate voltage (VG) was characterized. It was found that in the case of gold (Au) electrodes, the IV curves of CNTFETs clearly show behavior of the CNT (metallic or semiconducting) aligned across the source and drain of CNTFETs, while in the case of bismuth telluride (Bi2Te3) electrodes, the I-V curves are less dependent on the type of CNTs (metallic or semiconducting). The developed carbon nanotube field-effect transistors (CNTFETs) can be a good candidate for the application of nanoelectronics and integrated circuits with a high mobility and fast switching.

Carbon Felt/Carbon Nanotubes/Pani as pH Sensor

2007 ◽  
Vol 1018 ◽  
Author(s):  
Glaucio Ribeiro Silva ◽  
Elaine Yoshiko Matsubara ◽  
Paola Corio ◽  
Jose Mauricio Rosolen ◽  
Marcelo Mulato
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Conductivity ◽  
Ph Sensor ◽  
Chemical Vapor ◽  
Drain Current ◽  
Carbon Felt ◽  
Chemical Vapor Decomposition

AbstractThis work proposes the use of the composite carbon felt/carbon nanotube/Polyaniline as an alternative for applications as a pH sensor device. The carbon felt/carbon nanotube is an electronic conductivity material that was obtained from polymer felt (poliacrilonitrile felt) using oxidation and carbonization processes. The cup-stacked and bamboo-like tubes were grown on the fibers of carbon felt by chemical vapor decomposition method. The sensor was obtained by incorporating polyaniline (Pani) on the nanotubes present on the fibers of carbon felt/carbon nanotubes composite. The measuring process uses an EGFET (Extended Gate Field Effect Transistors) configuration, which is a derivation of the ISFET (Ion Sensitive Field Effect Transistor) - that is basically a chemical semiconductor sensor. The drain-current versus source-drain voltage is presented for varying pH concentrations from 2 up to 12.

Oxygen plasma post process to obtain consistent conductance of carbon nanotubes in carbon nanotube field-effect transistors

2012 ◽  
Vol 101 (17) ◽  
pp. 173104 ◽  
Author(s):  
Chi Woong Jang ◽  
Young Tae Byun ◽  
Deok Ha Woo ◽  
Seok Lee ◽  
Young Min Jhon
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Field Effect Transistors ◽  
Post Process

scholarly journals ELECTRICAL TRANSPORT PROPERTIES AND FIELD EFFECT TRANSISTORS OF CARBON NANOTUBES

NANO ◽  
2006 ◽  
Vol 01 (01) ◽  
pp. 1-13 ◽  
Author(s):  
HONGJIE DAI ◽  
ALI JAVEY ◽  
ERIC POP ◽  
DAVID MANN ◽  
WOONG KIM ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Electrical Transport Properties

This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also review the high field electrical transport properties of nanotubes on substrates and in freely suspended forms. Owing to their unique properties originating from their crystalline 1D structure and the strong covalent carbon–carbon bonding configuration, carbon nanotubes are highly promising as building blocks for future electronics. They are found to perform favorably in terms of ON-state current density as compared to the existing silicon technology, owing to their superb electron transport properties and compatibility with high-κ gate dielectrics. Future directions and challenges for carbon nanotube-based electronics are also discussed.

A simple and novel method for the quantitative detection of 5-hydroxymethylcytosine using carbon nanotube field-effect transistors

Nano Research ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 1701-1708 ◽  
Author(s):  
Fang Yuan ◽  
Yanyan Deng ◽  
Wenyu Zhou ◽  
Min Zhang ◽  
Zigang Li
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Quantitative Detection ◽  
Novel Method

scholarly journals The Effects of Hydrogen Annealing on Carbon Nanotube Field-Effect Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2481
Author(s):  
Takashi Uchino ◽  
Greg N. Ayre ◽  
David C. Smith ◽  
John L. Hutchison ◽  
C. H. de Groot ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Hydrogen Adsorption ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Hydrogen Annealing ◽  
Metallic Behavior ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

We have systematically investigated the effects of hydrogen annealing on Ni- and Al-contacted carbon nanotube field-effect transistors (CNTFETs), whose work functions have not been affected by hydrogen annealing. Measured results show that the electronic properties of single-walled carbon nanotubes are modified by hydrogen adsorption. The Ni-contacted CNTFETs, which initially showed metallic behavior, changed their p-FET behavior with a high on-current over 10 µA after hydrogen annealing. The on-current of the as-made p-FETs is much improved after hydrogen annealing. The Al-contacted CNTFETs, which initially showed metallic behavior, showed unipolar p-FET behavior after hydrogen annealing. We analyzed the energy band diagrams of the CNTFETs to explain experimental results, finding that the electron affinity and the bandgap of single-walled carbon nanotubes changed after hydrogen annealing. These results are consistent with previously reported ab initio calculations.

FABRICATION OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS WITH OCMC DISPERSED SINGLE-WALLED CARBON NANOTUBES

2010 ◽  
Vol 09 (04) ◽  
pp. 377-381
Author(s):  
KUMAR RAJ ◽  
QING ZHANG ◽  
LIANGYU YAN ◽  
MARY B. CHAN PARK
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Oxygen Adsorption ◽  
P Type ◽  
Walled Carbon Nanotubes ◽  
Single Walled Cnts ◽  
Walled Cnts

We report on the fabrication of carbon nanotube field effect transistors (CNTFETs) from dispersed single-walled CNTs using OCMC (O-Carboxymethylchitosan) as the surfactant. The as-prepared devices exhibit p-type as well as ambipolar characteristics due to oxygen adsorption at the metal/nanotube contacts. The Raman scattering from the SWCNTs shows that OCMC disperses CNTs efficiently. Rapid thermal annealing (RTA) at 400°C for 5 min is found to partially remove OCMC from the surface of SWCNTs.

Sign in / Sign up

Export Citation Format

Share Document