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Hole Confinement and 1/fNoise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.45.4006
◽
2006
◽
Vol 45
(5A)
◽
pp. 4006-4008
◽
Cited By ~ 2
Author(s):
Yu Min Lin
◽
San Lein Wu
◽
Shoou Jinn Chang
◽
Pang Shiu Chen
◽
Chee Wee Liu
Keyword(s):
Quantum Well
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Double Quantum
◽
Double Quantum Well
◽
Hole Confinement
◽
P Type
Download Full-text
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Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics
◽
10.1063/1.1619197
◽
2003
◽
Vol 94
(10)
◽
pp. 6855-6863
◽
Cited By ~ 13
Author(s):
S. H. Olsen
◽
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◽
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◽
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◽
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◽
Field Effect
◽
High Performance
◽
Field Effect Transistors
◽
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◽
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Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application
Journal of The Electrochemical Society
◽
10.1149/1.3363736
◽
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◽
Vol 157
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◽
pp. H633
◽
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Author(s):
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◽
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◽
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◽
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◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
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Selective Growth
◽
Oxide Semiconductor
◽
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Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.48.04c036
◽
2009
◽
Vol 48
(4)
◽
pp. 04C036
◽
Cited By ~ 5
Author(s):
San-Lein Wu
◽
Chung Yi Wu
◽
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Cheng-Wen Kuo
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Shin-Hsin Chen
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Flicker Noise
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
P Type
◽
Strained Sige
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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method
Applied Physics Letters
◽
10.1063/1.4870257
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2014
◽
Vol 104
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Quantum Well
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Trap Density
◽
Oxide Semiconductor
◽
Interface Trap Density
◽
Interface Trap
◽
Hall Method
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Hole confinement and mobility in heterostructure Si/Ge/Si p-channel metal–oxide–semiconductor field effect transistors
Journal of Applied Physics
◽
10.1063/1.365415
◽
1997
◽
Vol 81
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◽
pp. 8079-8083
◽
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Author(s):
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◽
K. G. Robins
◽
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◽
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◽
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◽
...
Keyword(s):
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◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Hole Confinement
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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack
IEEE Electron Device Letters
◽
10.1109/led.2015.2438433
◽
2015
◽
Vol 36
(7)
◽
pp. 672-674
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Author(s):
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Quantum Well
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Metal Oxide
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
◽
Gate Stack
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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
◽
10.1109/edtm47692.2020.9117824
◽
2020
◽
Author(s):
T. Maeda
◽
H. Ishii
◽
W. H. Chang
◽
H. Kanaya
◽
T. Asano
Keyword(s):
Quantum Well
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Thz Wave
◽
Wave Detection
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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
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10.1143/jjap.38.4696
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1999
◽
Vol 38
(Part 1, No. 8)
◽
pp. 4696-4698
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Author(s):
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
◽
Charge Pumping
◽
Current Voltage
◽
P Type
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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.47.6200
◽
2008
◽
Vol 47
(8)
◽
pp. 6200-6204
◽
Cited By ~ 1
Author(s):
Chorng-Jye Sheu
Keyword(s):
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◽
Field Effect
◽
Field Effect Transistors
◽
Drain Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Hot Electron
◽
Buried Channel
◽
P Type
◽
Post Stress
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Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
Applied Physics Letters
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10.1063/1.1417515
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Vol 79
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pp. 3344-3346
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
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