Band-to-Band Hot-hole Erase Characteristics of 2-Bit/cell NOR-type Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell with Spacer-type Storage Node on Recessed Channel Structure

2007 ◽  
Vol 46 (No. 34) ◽  
pp. L798-L800 ◽  
Author(s):  
Kyoung-Rok Han ◽  
Han-A-Reum Jung ◽  
Jong-Ho Lee
Keyword(s):  
Flash Memory ◽  
Silicon Oxide ◽  
Memory Cell ◽  
Channel Structure ◽  
Type Silicon ◽  
Storage Node ◽  
Flash Memory Cell ◽  
Recessed Channel ◽  
Nitride Oxide

2-bit/cell Characteristics of High-Density and High-Performance SONOS Flash Memory Cell with Recessed Channel Structure

2007 ◽  
Author(s):  
Kyoung-Rok Han ◽  
Young Min Kim ◽  
Ki-Heung Park ◽  
Sang-Goo Jung ◽  
Byung-Kil Choi ◽  
...  
Keyword(s):  
Flash Memory ◽  
High Performance ◽  
Memory Cell ◽  
High Density ◽  
Channel Structure ◽  
Flash Memory Cell ◽  
Recessed Channel

Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure

2008 ◽  
Vol E91-C (5) ◽  
pp. 736-741
Author(s):  
H.-A-R. JUNG ◽  
K.-R. HAN ◽  
Y.-M. KIM ◽  
J.-H. LEE
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Channel Structure ◽  
Device Design ◽  
Saddle Type ◽  
Flash Memory Cell

Electrical Characterization in Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory using Bandgap Engineering Method

2012 ◽  
pp. 95-99
Author(s):  
Sang-Youl Lee ◽  
Seung-Dong Yang ◽  
Jae-Sub Oh ◽  
Ho-Jin Yun ◽  
Kwang-Seok Jeong Yu-MiKim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Silicon Oxide ◽  
Electrical Characterization ◽  
Engineering Method ◽  
Bandgap Engineering ◽  
Type Silicon ◽  
Nitride Oxide

Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection

2008 ◽  
Vol 93 (23) ◽  
pp. 232105 ◽  
Author(s):  
Man Chang ◽  
Minseok Jo ◽  
Seonghyun Kim ◽  
Yongkyu Ju ◽  
Seungjae Jung ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Injection ◽  
Memory Cell ◽  
Charge Loss ◽  
Flash Memory Cell ◽  
Nitride Oxide ◽  
Different Levels
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