Transport Properties of a DNA-Conjugated Single-Wall Carbon Nanotube Field-Effect Transistor

2009 ◽  
Vol 48 (6) ◽  
pp. 06FD08 ◽  
Author(s):  
JongSeung Hwang ◽  
Duk Soo Kim ◽  
Doyeol Ahn ◽  
Sung Woo Hwang
Keyword(s):  
Carbon Nanotube ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Effect Transistor

Single Wall Carbon Nanotube Field Effect Transistor Model

2011 ◽  
Vol 8 (2) ◽  
pp. 261-267 ◽  
Author(s):  
Mohammad Taghi Ahmadi ◽  
Razali Ismail ◽  
Zaharah Johari ◽  
Jeffrey Frank Webb
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Transistor Model ◽  
Effect Transistor

scholarly journals Hall effect in gated single-wall carbon nanotube films

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Yohei Yomogida ◽  
Kanako Horiuchi ◽  
Ryotaro Okada ◽  
Hideki Kawai ◽  
Yota Ichinose ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Hall Effect ◽  
Field Effect Transistor ◽  
Transport Systems ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
One Dimensional ◽  
Hall Effect Measurements ◽  
Effect Transistor ◽  
Nanotube Films

AbstractThe presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.

A Method Study on Assembly of Single-Wall Carbon Nanotube Field Effect Transistor Using Dielectrophoresis

2010 ◽  
Vol 139-141 ◽  
pp. 1550-1553 ◽  
Author(s):  
Ke Xu ◽  
Cheng Dong Wu ◽  
Xiao Jun Tian ◽  
Ying Zhang ◽  
Zai Li Dong
Keyword(s):  
Carbon Nanotube ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Building Blocks ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Nanoscale Electronics ◽  
Experimental Parameters ◽  
Effect Transistor

Single-wall carbon nanotubes are candidates for a number of building blocks in nanoscale electronics. With respect to the assembly of carbon nanotube field effect transistor, the dielectrophoresis technology is adopted, which assembles SWCNTs between the micro-electrodes, SWCNTs are affected by the electrophoretic force which is carried out by the related theoretical analysis in a nonuniform electric field. The driving electric field of dielectrophoresis is simulated by the comsol software. According to the simulation results, a number of the experiments are done. It turns out that the required experimental parameters of the efficient assembly of SWCNT were obtained. AFM scanning and electrical properties of SWCNTs show that the method can achieve the effective assembly of carbon nanotube field effect transistor. SWCNTs are driven in the microelectrode gap, having a good arrangement of uniform orientation and assembly results, and proportional to the arrangement density along the electrode width direction and the duration of DEP. Meanwhile, it also provides an effective method of assembly and manufacture for other one-dimensional nanomaterials assembly of nanoelectronic devices.

scholarly journals Hall effect in gated single-wall carbon nanotube film

2021 ◽  
Author(s):  
Yohei Yomogida ◽  
Kanako Horiuchi ◽  
Ryotaro Okada ◽  
Hideki Kawai ◽  
Yota Ichinose ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Hall Effect ◽  
Field Effect Transistor ◽  
Transport Systems ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
One Dimensional ◽  
Hall Effect Measurements ◽  
Effect Transistor ◽  
Nanotube Films

Abstract The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal-semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.

Sign in / Sign up

Export Citation Format

Share Document