Large Remanent Polarization in Sm-Substituted BiFeO3Thin Film Formed by Chemical Solution Deposition

2010 ◽  
Vol 49 (4) ◽  
pp. 041502 ◽  
Author(s):  
Zhiyong Zhong ◽  
Yoshihiro Sugiyama ◽  
Hiroshi Ishiwara
Keyword(s):  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Large Remanent Polarization

Structure and Electrical Properties of Highly (100)-Oriented Ba(Zr0.05Ti0.95)O3 Films Prepared by Chemical Solution Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 101-104 ◽  
Author(s):  
Yi Ping Guo ◽  
Kazuyuki Suzuki ◽  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
Kazumi Kato
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Deposition Process ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Orientation Degree ◽  
Oriented Films

A chemical solution deposition process for preparation of highly (100)-oriented Ba(Zr0.05Ti0.95)O3 films was developed. The orientation degree of Ba(Zr0.05Ti0.95)O3 thin films prepared by this process can reach up to 99.1%. The electrical properties of the (100)-oriented films prepared by this process have been studied. The Ba(Zr0.05Ti0.95)O3 films with a thickness of about 270 nm show a dielectric constant of ∼740 and a loss tangent of ∼3%. The remanent polarization (2Pr) and coercive field (2Ec) are 3.2 μC/cm2 and 34 kV/cm, respectively.

Improvement of remanent polarization of CeO2–HfO2 solid solution thin films on Si substrates by chemical solution deposition

2020 ◽  
Vol 117 (21) ◽  
pp. 212904
Author(s):  
Shuaizhi Zheng ◽  
Zidong Zhao ◽  
Zhaotong Liu ◽  
Binjian Zeng ◽  
Lu Yin ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd3+−substituted Bismuth Titanate Thin Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Hiroshi Uchida ◽  
Seiichiro Koda ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Takayuki Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

ABSTRACTTi-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)4Ti3O12(BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50)1-(x/12)(Ti3.00-xVx)O15(x= 0 ∼ 0.09), were fabricated on (111)Pt/Ti/ SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

THE INSERTION EFFECT OF Bi-EXCESS LAYERS ON STOICHIOMETRIC BiFeO3 THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION

2008 ◽  
Vol 01 (01) ◽  
pp. 19-24 ◽  
Author(s):  
YOSHITAKA NAKAMURA ◽  
SEIJI NAKASHIMA ◽  
DAN RICINSCHI ◽  
MASANORI OKUYAMA
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Bottom Surface ◽  
Chemical Solution ◽  
Surface Layers ◽  
Solution Deposition ◽  
Excess Surface ◽  
Imperfect Crystal

The insertion effect of Bi -excess layers on stoichiometric BiFeO 3 thin films prepared by chemical solution deposition is investigated. A stoichiometric BiFeO 3 thin film with both the Bi -excess top and bottom surface layers shows improved crystallinity with the remanent polarization of 65 μC/cm2 at 80 K, which is larger than for BiFeO 3 film prepared by the same process using stoichiometric solution. These results are attributed to the reduction of the imperfect crystal at the interface between the BiFeO 3 film and electrode. By inserting Bi-excess layers, the saturated magnetization of all the films becomes smaller than that of the film using stoichiometric solution. Bi -excess surface layers at the top and bottom interfaces are an effective way to obtain good ferroelectric properties.

Chemically Deposited (100)-Oriented BaTiO3 Films with Highly Concentrated Solution Using High Crystallinity BaTiO3 as a Buffer Layer

2006 ◽  
Vol 320 ◽  
pp. 77-80 ◽  
Author(s):  
Yi Ping Guo ◽  
Kazuyuki Suzuki ◽  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
Kazumi Kato
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
High Crystallinity ◽  
Batio3 Thin Film ◽  
Concentrated Solution

BaTiO3 films with thickness of ~1 2m were prepared by chemical solution deposition on LaNiO3/Pt/TiOx/SiO2/Si substrate with a thin highly (100)-oriented and high crystallinity BaTiO3 thin film (~140 nm) as a buffer layer. The BaTiO3 films prepared by using a 0.5 mol/L solution have high crystallinity and still show (100) preferred orientation. The electrical properties of the (100)-oriented BaTiO3 films prepared by this process have been studied. A dielectric constant of ~910 and a loss tangent of ~3.5% (1 kHz) were obtained. The remanent polarization (2 Pr) and coercive field (2 Ec) are 4.0 μC/cm2 and 35 kV/cm, respectively.

The Effect of Bi-excess Surface Layers on BiFeO3 Thin Films Prepared by Chemical Solution Deposition

2007 ◽  
Vol 1034 ◽  
Author(s):  
Yoshitaka Nakamura ◽  
Seiji Nakashima ◽  
Dan Ricinschi ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Bottom Surface ◽  
Chemical Solution ◽  
Surface Layers ◽  
Solution Deposition ◽  
Excess Surface ◽  
Imperfect Crystal

AbstractWe have investigated the effect of Bi-excess surface layers of stoichiometric BiFeO3 thin films prepared by chemical solution deposition. A stoichiometric BiFeO3 thin film with both the Bi-excess top and bottom surface layers shows improved crystallinity with the remanent polarization of 65 μC/cm2 at 80 K, which is larger than BiFeO3 film prepared by the same process using stoichiometric solution. These results are attributed to the reduction of the imperfect crystal at the interface between BiFeO3 film and electrode. Stoichiometric BiFeO3 thin film with Bi-excess top and bottom surface layers also reserves the magnetic property of stoichiometric film. Stoichiometric BiFeO3 thin films with Bi-excess surface layers are an effective way to obtain good multiferroic properties.

Bottom Electrode Effects in Controlling Orientation of Lead Zirconate Titanate Films Deposited by Chemical Solution Deposition

1999 ◽  
Vol 596 ◽  
Author(s):  
Deborah A. Neumayer ◽  
Katherine L. Saenger ◽  
Robert B. Laibowitz ◽  
Thomas M. Shaw ◽  
Rebecca Mih ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Fatigue Endurance ◽  
Seed Layers

AbstractThe microstructure and electrical properties of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) films prepared by chemical solution deposition (CSD) with and without lead titanate (PT) seed layers were examined as a function of Ir/lr oxide electrode type. The novel PZT CSD solution was prepared from a mixture of zirconium and titanium butoxyethoxides and lead ethylhexanoate dissolved in butoxyethanol. The use of excess-lead (PbxsTi) and stoichiometric PT seed layers was found to promote PZT(111) orientation on Ir but not on Ir oxide. Ir substrate thickness was observed to influence orientation of PZT deposited on stoichiometric PT with greater PZT(111) texturing on thinner Ir(111) substrates. PZT with greater PZT(111) texturing tended to have greater remanent polarization (2Pr, μC/cm2). PZT deposited on stoichiometric PT seed layers on Ir(111) was of higher film quality than PZT deposited on PbxsTi seed layers on Ir(111). The PZT films deposited on stoichiometric PT on Ir(111) had enhanced PZT(111) orientation, a reduced pyrochlore content, and tended to saturate at lower coercive fields, have higher remanent polarization, squarer hysteresis loops with less tilt and greater fatigue endurance. The use of iridium oxide top electrode was demonstrated to significantly improve fatigue endurance compared to use of an iridium top electrode.

scholarly journals Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Cost Effective ◽  
Deposition Process ◽  
Stability Study ◽  
Fused Silica ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Optimal Annealing Temperature ◽  
Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

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