The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

Thin Solid Films ◽

10.1016/j.tsf.2011.09.081 ◽

2012 ◽

Vol 520 (6) ◽

pp. 2166-2169

Author(s):

Moongyu Jang ◽

Seongjae Lee

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

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20-nm-gate-length erbium-/platinum-silicided n-∕p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3025726 ◽

2008 ◽

Vol 93 (19) ◽

pp. 192112 ◽

Author(s):

Moongyu Jang ◽

Cheljong Choi ◽

Seongjae Lee

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Barrier Metal ◽

P Type ◽

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High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3592483 ◽

2011 ◽

Vol 29 (3) ◽

pp. 032211 ◽

Author(s):

Myungsim Jun ◽

Youngsam Park ◽

Younghoon Hyun ◽

Taehyoung Zyung ◽

Moongyu Jang ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Barrier Metal ◽

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Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation

Applied Physics Letters ◽

10.1063/1.2150581 ◽

2005 ◽

Vol 87 (26) ◽

pp. 263505 ◽

Author(s):

J. Knoch ◽

M. Zhang ◽

Q. T. Zhao ◽

St. Lenk ◽

S. Mantl ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dopant Segregation ◽

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Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.104204 ◽

2010 ◽

Vol 49 (10) ◽

pp. 104204 ◽

Author(s):

Shuichi Toriyama

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Barrier Metal ◽

Tunneling Devices ◽

Resonant Tunneling Devices

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Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2660 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2660-2663 ◽

Author(s):

Lang Zeng ◽

Xiao-Yan Liu ◽

Gang Du ◽

Jin-Feng Kang ◽

Ru-Qi Han

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lowering Effect ◽

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Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3204439 ◽

2009 ◽

Vol 95 (8) ◽

pp. 083502

Author(s):

Sung-Jin Choi ◽

Jin-Woo Han ◽

Moongyu Jang ◽

Cheljong Choi ◽

Yang-Kyu Choi

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Current Injection ◽

Oxide Semiconductor ◽

Injection Mechanism ◽

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A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.1645665 ◽

2004 ◽

Vol 84 (5) ◽

pp. 741-743 ◽

Author(s):

Moongyu Jang ◽

Yarkyeon Kim ◽

Jaeheon Shin ◽

Seongjae Lee ◽

Kyoungwan Park

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Effect Transistor ◽

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Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.123059 ◽

1999 ◽

Vol 74 (3) ◽

pp. 454-456 ◽

Author(s):

Q. T. Zhao ◽

F. Klinkhammer ◽

M. Dolle ◽

L. Kappius ◽

S. Mantl

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors

Materials Science and Engineering B ◽

10.1016/j.mseb.2004.07.032 ◽

2004 ◽

Vol 114-115 ◽

pp. 51-55 ◽

Author(s):

Moongyu Jang ◽

Yarkyeon Kim ◽

Jaeheon Shin ◽

Seongjae Lee

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm

Electronics Letters ◽

10.1049/el:20081645 ◽

2008 ◽

Vol 44 (2) ◽

pp. 159 ◽

Author(s):

C.-J. Choi ◽

M.-G. Jang ◽

Y.-Y. Kim ◽

M.-S. Jun ◽

T.-Y. Kim ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Barrier Metal ◽

P Type ◽

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